2002. 1. 24
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRA557U~KRA559U
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM
MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A1
1.3 0.1
A1
+
_
+
_
+
_
+
_
+
_
1. Q IN (BASE)
2. Q , Q COMMON (EMITTER)
3. Q IN (BASE)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
1
1
1
2
2
2
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
1
2
3
5
4
TYPE NO.
R1(k )
R2(k )
KRA557U
10
47
KRA558U
22
47
KRA559U
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA557U 559U
V
O
-50
V
Input Voltage
KRA557U
V
I
-30, 6
V
KRA558U
-40, 7
KRA559U
-40, 15
Output Current
KRA557U 559U
I
O
-100
mA
Power Dissipation
P
D
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA557U
KRA558U
KRA559U
MARK
PH
PI
PJ
1
Q1
2
3
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
* Total Rating.
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