2002. 1. 24
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SEMICONDUCTOR
TECHNICAL DATA
KRA757E~KRA759E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM
MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
4. Q COMMON (EMITTER)
3. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
1
2
2. Q IN (BASE)
1
1
2
2
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
1
2
3
6
5
4
TYPE NO.
R1(k )
R2(k )
KRA757E
10
47
KRA758E
22
47
KRA759E
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA757E 759E
V
O
-50
V
Input Voltage
KRA757E
V
I
-30, 6
V
KRA758E
-40, 7
KRA759E
-40, 15
Output Current
KRA757E 759E
I
O
-100
mA
Power Dissipation
P
D
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA757E
KRA758E
KRA759E
MARK
PH
PI
PJ
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Rating.
Marking