2002. 5. 14
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SEMICONDUCTOR
TECHNICAL DATA
KRC231S~KRC235S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER
CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25)
R1
C
E
B
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
600
mA
Collector Power Dissipation
P
C
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
TYPE
KRC231S
KRC232S
KRC233S
KRC234S
KRC235S
MARK
NW
NY
NZ
NNA
NNB
MARK SPEC
Type Name
Marking
Lot No.
Lot No.
Type Name
2002. 5. 14
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KRC231S~KRC235S
Revision No : 3
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : * Characteristic of Transistor Only.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA
15
-
-
V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50A
30
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50A
5.0
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=30V
-
-
0.5
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=50mA, I
B
=2.5mA
-
40
80
mV
DC Current Gain
h
FE
V
CE
=5V, I
C
=50mA
200
350
800
-
Input Resistor
KRC231S
R
1
-
2.2
-
k
KRC232S
-
5.6
-
KRC233S
-
10
-
KRC234S
-
4.7
-
KRC235S
-
6.8
-
Transition Frequency
f
T
*
V
CE
=10V, I
E
=-50mA,
f=100MHz
-
200
-
MHz
On Resistance
Ron
f=1kHz, I
B
=1mA, V
IN
=0.3V
-
0.6
-
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