2002. 12. 5
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SEMICONDUCTOR
TECHNICAL DATA
KRC281M~KRC286M
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : V
EBO
=25V(Min)
High reverse h
FE
: reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
Low on resistance : R
on
=1 (Typ.) (I
B
=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
1 2 3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
25
V
Collector Current
I
C
300
mA
Collector Power Dissipation
P
C
400
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
R1
C
E
B
2002. 12. 5
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KRC281M~KRC286M
Revision No : 1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA
20
-
-
V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50 A
50
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50 A
25
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=3mA
-
-
0.1
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=4mA
350
-
1200
Input Resistor
KRC281M
R
1
-
2.2
-
k
KRC282M
-
4.7
-
KRC283M
-
5.6
-
KRC284M
-
6.8
-
KRC285M
-
10
-
KRC286M
-
22
-
Transition Frequency
f
T *
V
CE
=6V, I
C
=4mA,
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.8
-
pF
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Characteristic of Transistor Only.
Note) h
FE
Classification B:350 1200
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