2005. 5. 9
1/2
SEMICONDUCTOR
TECHNICAL DATA
KRC281U~KRC286U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : V
EBO
=25V(Min)
High reverse h
FE
: reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
Low on resistance : R
on
=1 (Typ.) (I
B
=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
A
B
D
E
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42
N
0.10 MIN
+
_
+
_
+
_
+
_
1. EMITTER
2. BASE
3. COLLECTOR
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
25
V
Collector Current
I
C
300
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
R1
C
E
B
Type Name
Marking
TYPE
KRC281U KRC282U KRC283U KRC284U KRC285U KRC286U
MARK
MQ
MR
MS
MT
MU
MV
MARK SPEC
2005. 5. 9
2/2
KRC281U~KRC286U
Revision No : 0
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA
20
-
-
V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50 A
50
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50 A
25
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=3mA
-
-
0.1
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=4mA
350
-
1200
Input Resistor
KRC281U
R
1
-
2.2
-
k
KRC282U
-
4.7
-
KRC283U
-
5.6
-
KRC284U
-
6.8
-
KRC285U
-
10
-
KRC286U
-
22
-
Transition Frequency
f
T *
V
CE
=6V, I
C
=4mA,
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.8
-
pF
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Characteristic of Transistor Only.
Note) h
FE
Classification B:350 1200
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