1999. 6. 8
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SEMICONDUCTOR
TECHNICAL DATA
KRC401E~KRC406E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
R1
R2
COMMON
OUT
IN
MARK SPEC
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRC401E
4.7
4.7
KRC402E
10
10
KRC403E
22
22
KRC404E
47
47
KRC405E
2.2
47
KRC406E
4.7
47
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC401E 406E
V
O
50
V
Input Voltage
KRC401E
V
I
20, -10
V
KRC402E
30, -10
KRC403E
40, -10
KRC404E
40, -10
KRC405E
12, -5
KRC406E
20, -5
Output Current
KRC401E 406E
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC401E
KRC402E
KRC403E
KRC404E
KRC405E
KRC406E
MARK
NA
NB
NC
ND
NE
NF