2001. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KRC407V~KRC409V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRC407V
10
47
KRC408V
22
47
KRC409V
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC407V 409V
V
O
50
V
Input Voltage
KRC407V
V
I
30, -6
V
KRC408V
40, -7
KRC409V
40,-15
Output Current
KRC407V 409V
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC407V
KRC408V
KRC409V
MARK
NH
NI
NJ