2002. 7. 10
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC410V~KRC414V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
C
E
B
Type Name
Marking
CHARACTERISTIC
SYMBOL RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
CHARACTERISTIC
SYMBOL RATING
UNIT
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
DC Current Gain
h
FE
V
CE
=5V, I
C
=1mA
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=0.5mA
-
0.1
0.3
V
Transition Frequency
f
T
*
V
CE
=10V, I
C
=5mA
-
250
-
MHz
Input Resistor
KRC410V
R
1
-
4.7
-
k
KRC411V
-
10
-
KRC412V
-
100
-
KRC413V
-
22
-
KRC414V
-
47
-
TYPE
KRC410V
KRC411V
KRC412V
KRC413V
KRC414V
MARK
NK
NM
NN
NO
NP
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : * Characteristic of Transistor Only.
2002. 7. 10
3/4
KRC410V~KRC414V
Revision No : 1
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.1
FE
300
0.3
1
3
2k
h - I
FE
C
C
10
30
100
10
30
50
100
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
CE
0.3
COLLECTOR CURRENT I (mA)
0.1
DC CURRENT GAIN h
FE
100
30
50
10
300
500
1k
2k
V =5V
10
3
1
Ta=100 C
Ta=25 C
Ta=-25 C
CE
100
30
C
h - I
FE
C
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
0.3
10
0.1
50
30
100
10
V =5V
Ta=-25 C
1
CE
3
100
30
C
FE
1k
500
300
2k
Ta=25 C
Ta=100 C
h - I
C
FE
KRC410V
KRC411V
KRC412V
KRC410V
0.3
COLLECTOR CURRENT I (mA)
0.1
COLLECTOR-EMITTER SATURATIN
CE(sat)
0.1
0.05
0.03
0.01
1
0.5
0.3
2
I /I =20
10
3
1
Ta=-25 C
Ta=25 C
Ta=100 C
C
100
30
C
V - I
CE(sat)
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
I /I =20
Ta=-25 C
Ta=100 C
0.3
0.1
0.3
0.5
0.01
0.03
0.05
0.1
VOLTAGE V (V)
CE(sat)
1
C
1
3
10
Ta=25 C
KRC411V
2
CE(sat)
V - I
C
30
100
C
B
B
CE(sat)
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
COLLECTOR CURRENT I (mA)
Ta=100 C
0.3
Ta=-25 C
0.1
0.05
0.03
0.01
0.1
1
Ta=25 C
3
10
100
30
C
I /I =20
KRC412V
0.5
0.3
1
2
B
C
V - I
CE(sat)
C
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