2002. 7. 10
1/6
SEMICONDUCTOR
TECHNICAL DATA
KRC416V~KRC422V
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRC416V
1
10
KRC417V
2.2
2.2
KRC418V
2.2
10
KRC419V
4.7
10
KRC420V
10
4.7
KRC421V
47
10
KRC422V
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC416V~422V
V
O
50
V
Input Voltage
KRC416V
V
I
10, -5
V
KRC417V
12, -10
KRC418V
12,-5
KRC419V
20, -7
KRC420V
30, -10
KRC421V
40, -15
KRC422V
40, -10
Output Current
KRC416V~422V
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC416V KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V
MARK
N2
N4
N5
N6
N7
N8
N9