2002. 12. 5
1/2
SEMICONDUCTOR
TECHNICAL DATA
KRC681T~KRC686T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : V
EBO
=25V(Min)
High reverse h
FE
: reverse h
FE
=150(Typ.) (V
CE
=-2V, I
C
=-4mA)
Low on resistance : R
on
=1 (Typ.) (I
B
=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM MILLIMETERS
A
B
D
E
TSV
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
B
E
C
L
H
J
J
I
2
3
1
5
4
+
_
+
_
+
_
+
_
+
_
1. Q IN (BASE)
2. Q , Q COMMON (EMITTER)
3. Q IN (BASE)
4. Q OUT (COLLECTOR)
5. Q OUT (COLLECTOR)
1
1
1
2
2
2
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
25
V
Collector Current
I
C
300
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
h
FE
classification
B
KRC681T
MQB
KRC682T
MRB
KRC683T
MSB
KRC684T
MTB
KRC685T
MUB
KRC686T
MVB
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
R1
C
E
B
1
Q1
2
3
5
4
Q2
* Package mounted on a ceramic board (600
0.8 )
MARK SPEC
h Rank
FE
Type Name
Marking
Lot No.
1
2
3
5
4
2002. 12. 5
2/2
KRC681T~KRC686T
Revision No : 3
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA
20
-
-
V
Collector-Base Breakdown Voltage
BV
CBO
I
C
=50 A
50
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=50 A
25
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=30mA, I
B
=3mA
-
-
0.1
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=4mA
350
-
1200
Input Resistor
KRC681T
R
1
-
2.2
-
k
KRC682T
-
4.7
-
KRC683T
-
5.6
-
KRC684T
-
6.8
-
KRC685T
-
10
-
KRC686T
-
22
-
Transition Frequency
f
T *
V
CE
=6V, I
C
=4mA,
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.8
-
pF
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Characteristic of Transistor Only.
Note) h
FE
Classification B:350 1200
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