2002. 7. 10
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SEMICONDUCTOR
TECHNICAL DATA
KRC836E~KRC842E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
2. Q COMMON (EMITTER)
3. Q IN (BASE)
4. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
1
1
1
2
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON
OUT
IN
Type Name
1
2
3
6
5
4
TYPE NO.
R1(k )
R2(k )
KRC836E
1
10
KRC837E
2.2
2.2
KRC838E
2.2
10
KRC839E
4.7
10
KRC840E
10
4.7
KRC841E
47
10
KRC842E
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC836E~842E
V
O
50
V
Input Voltage
KRC836E
V
I
10, -5
V
KRC837E
12, -10
KRC838E
12,-5
KRC839E
20, -7
KRC840E
30, -10
KRC841E
40, -15
KRC842E
40, -10
Output Current
KRC836E~842E
I
O
100
mA
Power Dissipation
P
D
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC836E KRC837E KRC838E KRC839E KRC840E KRC841E KRC842E
MARK
Y2
Y4
Y5
Y6
Y7
Y8
Y9
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Rating.
Marking