2002. 7. 10
1/5
SEMICONDUCTOR
TECHNICAL DATA
KRC841T~KRC846T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Output Current : 800mA.
DIM MILLIMETERS
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
3
5
1
6
4
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
4. Q COMMON (EMITTER)
3. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
1
2
2. Q IN (BASE)
1
1
2
2
MAXIMUM RATING (Ta=25 )
TYPE NO.
R1 (k )
R2 (k )
KRC841T
1
1
KRC842T
2.2
2.2
KRC843T
4.7
4.7
KRC844T
10
10
KRC845T
1
10
KRC846T
2.2
10
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC841T~846T
V
O
50
V
Input Voltage
KRC841T
V
I
10, -10
V
KRC842T
12, -10
KRC843T
20, -10
KRC844T
30, -10
KRC845T
10, -5
KRC846T
12, -6
Output Current
KRC841T~846T
I
O
800
mA
Power Dissipation
P
D
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC841T
KRC842T
KRC843T
KRC844T
KRC845T
KRC846T
MARK
NA
NB
NC
ND
NE
NF
R1
R2
COMMON
OUT
IN
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600
0.8 )
MARK SPEC
Type Name
Marking
Lot No.
1
2
3
6
5
4
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
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