2002. 7. 10
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC860E~KRC864E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
4. Q EMITTER
3. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
2. Q BASE
1
1
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
C
E
B
Type Name
1
2
3
6
5
4
CHARACTERISTIC
SYMBOL RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
CHARACTERISTIC
SYMBOL RATING
UNIT
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
DC Current Gain
h
FE
V
CE
=5V, I
C
=1mA
120
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=0.5mA
-
0.1
0.3
V
Transition Frequency
f
T
*
V
CE
=10V, I
C
=5mA
-
250
-
MHz
Input Resistor
KRC860E
R
1
-
4.7
-
k
KRC861E
-
10
-
KRC862E
-
100
-
KRC863E
-
22
-
KRC864E
-
47
-
TYPE
KRC860E
KRC861E
KRC862E
KRC863E
KRC864E
MARK
NK
NM
NN
NO
NP
ELECTRICAL CHARACTERISTICS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
Q1
2
3
6
5
4
Q2
Marking
* Total Rating.
2002. 7. 10
3/4
KRC860E~KRC864E
Revision No : 2
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.1
FE
300
0.3
1
3
2k
h - I
FE
C
C
10
30
100
10
30
50
100
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =5V
CE
0.3
COLLECTOR CURRENT I (mA)
0.1
DC CURRENT GAIN h
FE
100
30
50
10
300
500
1k
2k
V =5V
10
3
1
Ta=100 C
Ta=25 C
Ta=-25 C
CE
100
30
C
h - I
FE
C
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
0.3
10
0.1
50
30
100
10
V =5V
Ta=-25 C
1
CE
3
100
30
C
FE
1k
500
300
2k
Ta=25 C
Ta=100 C
h - I
C
FE
KRC860E
KRC861E
KRC862E
KRC860E
0.3
COLLECTOR CURRENT I (mA)
0.1
COLLECTOR-EMITTER SATURATIN
CE(sat)
0.1
0.05
0.03
0.01
1
0.5
0.3
2
I /I =20
10
3
1
Ta=-25 C
Ta=25 C
Ta=100 C
C
100
30
C
V - I
CE(sat)
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATIN
I /I =20
Ta=-25 C
Ta=100 C
0.3
0.1
0.3
0.5
0.01
0.03
0.05
0.1
VOLTAGE V (V)
CE(sat)
1
C
1
3
10
Ta=25 C
KRC861E
2
CE(sat)
V - I
C
30
100
C
B
B
CE(sat)
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATIN
COLLECTOR CURRENT I (mA)
Ta=100 C
0.3
Ta=-25 C
0.1
0.05
0.03
0.01
0.1
1
Ta=25 C
3
10
100
30
C
I /I =20
KRC862E
0.5
0.3
1
2
B
C
V - I
CE(sat)
C
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