2003. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : V
CEO
300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C
re
=2.3pF (V
CB
=30V, f=1MHz)
Complementary KTC3503.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:60 120, Y:100 200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-100
mA
Pulse
I
CP
-200
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
7
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-200V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-10V, I
C
=-10mA
60
-
200
Transition Frequency
f
T
V
CE
=-30V, I
C
=-10mA
-
150
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-30V, I
E
=0, f=1MHz
-
3.1
-
pF
Reverse Transfer Capacitance
C
re
V
CB
=-30V, I
E
=0, f=1MHz
-
2.3
-
pF
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-20mA, I
B
=-2mA
-
-
-0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-20mA, I
B
=-2mA
-
-
-1.0
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-300
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-300
-
-
V
Base-Emitter Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
2003. 7. 24
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KTA1381
Revision No : 3
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
0
C
CE
I - V
C
CE
-2
-4
-6
-8
-10
-4
-8
-12
-16
-20
I =0
B
I =-20A
B
I =-40A
B
I =-60A
B
I =-80A
B
I =-100A
B
I =-120A
B
I =-140A
B
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
-6
-8
-2
-4
0
C
0
-2
-10
I =-60A
-8
I =-10A
I =-20A
I =-40A
I =-30A
I =0
I =-50A
-4
B
B
B
B
B
B
B
-6
CE
-10
I - V
C
CE
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
-60
-80
-20
-40
0
C
0
-0.2
-100
-0.8
-0.4
-0.6
BE
-1.0
I - V
C
BE
-120
V =-10V
CE
Ta
=75 C
Ta=25 C Ta=-25 C
COLLECTOR CURRENT I (mA)
h - I
FE
DC CURRENT GAIN h
C
FE
V =-10V
300
100
50
30
10
-100
-30
-10
-3
-1
-0.5
500
Ta=75 C
Ta=25 C
Ta=-25 C
CE
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
-30
10
30
-0.5
50
-1
-3
-10
C
-100
100
300
500
T
f - I
T
C
V =-30V
CE
COLLECTOR BASE VOLTAGE V (V)
OUTPUT CAPACITANCE C (pF)
-0.5
3
1
-1
50
30
10
5
ob
-30
-3
CB
-10
-100
C - V
Ob
CB
f =1MHz
T
C
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KTA1381
Revision No : 3
3
REVERSE TRANSFER CAPA-
-0.5
1
-10
COLLECTOR BASE VOLTAGE V (V)
-1
-3
CB
-30
-100
30
50
10
5
C - V
re
f =1MHz
T
CB
CITANCE C (pF)
re
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
-0.5
-1
-3
-10
C
CE(sat)
V - I
CE(sat)
C
VOLTAGE V (V)
-30
-100 -200
-0.03
-0.05
-0.1
-0.3
-0.5
-1
I /I =10
C B
VOLTAGE V (V)
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
-0.5
-0.3
-0.5
-1
BE(sat)
-3
-1
-3
-10
-100
C
-30
-200
V - I
-5
-10
BE(sat)
I /I =10
C B
C
C
COLLECTOR POWER DISSIPATION P (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
50
100
150
200
2
4
6
8
COLLECTOR EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
-3
C
-3
CE
-10
-30
SAFE OPERATING AREA
-100
-300
-5
-10
-30
-50
-100
-300
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
100mS*
DC OPERAT
ION
DC OPERATION
Tc=25 C
1mS* 500
S*
(2)
(1)
I MAX.(PULSED)*
C
I MAX.(CONTINUOUS)
C
(1) Tc=Ta
INFINITE HEAT SINK
(2) NO HEAT SINK
Ta=25 C
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