2003. 2. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1520S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-1
A
Pulse *
I
CP
-2
Base Current
I
B
-200
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Type Name
Marking
Lot No.
KMH
* Pulse Width = 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100 A
-120
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA
-100
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-100 A
-5
-
-
V
Collector Cut-Off Current
I
CBO
V
CB
=-100V
-
-
-100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=-4V
-
-
-100
nA
Collector-Emitter Cut-Off Current
I
CES
V
CES
=-100V
-
-
-100
nA
Collector-Emitter Saturation Voltage **
V
CE(sat)
(1)
I
C
=-250mA, I
B
=-25mA
-
-
-0.2
V
V
CE(sat)
(2)
I
C
=-500mA, I
B
=-50mA
-
-
-0.3
Base-Emitter Saturation Voltage **
V
BE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-1.1
V
Base-Emitter Voltag
V
BE
V
CE
=-5V, I
C
=-1mA
-
-
-1.0
V
DC Current Gain **
h
FE
(1)
V
CE
=-5V, I
C
=-1mA
100
-
-
h
FE
(2)
V
CE
=-5V, I
C
=-250mA
100
-
-
h
FE
(3)
V
CE
=-5V, I
C
=-500mA
100
-
300
h
FE
(4)
V
CE
=-5V, I
C
=-1A
50
-
-
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA, f=100MHz
50
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
-
5
pF
** Pulse Width = 300 S, Duty Cycle 2%.
2003. 2. 25
2/2
KTA1520S
Revision No : 1
0
VOLTAGE V (V)
CE(sat)
-0.01
-0.001
COLLECTOR CURRENT I (A)
C
V - I
CE(sat)
C
V - I
CE(sat)
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V (V)
CE(sat)
COLLECTOR-EMITTER SATURATION
-0.1
-1
-0.1
-0.2
-0.3
-0.4
I /I =10
C B
I /I =10
C
B
I /I =50
C
B
COLLECTOR CURRENT I (A)
C
Ta=-25 C
0
-0.01
-0.001
-0.1
-1
-0.1
-0.2
-0.3
-0.4
Ta=-55 C
Ta=25 C
Ta=100 C
-0.8
-0.6
-0.4
-0.3
-0.1
-0.03
-0.01
C
BE(sat)
V - I
C
COLLECTOR CURRENT I (A)
-0.001 -0.003
-1
-3
-1.0
-1.2
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (V)
B
C
I /I =10
Ta=100 C
C
BE
I - V
C
COLLECTOR CURRENT I (A)
BE
BASE-EMITTER VOLTAGE V (V)
CE
V =-5V
Ta=25 C
0
400
300
200
-0.3
-0.1
-0.03
-0.01
-0.001 -0.003
-1
-3
100
CE
V =-5V
Ta=100 C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
h - I
FE
C
Ta=25 C
Ta=-55 C
Ta=25 C
Ta=-55 C
Ta=-55 C
Ta=100 C
-0.1
-0.01
-0.001
-0.3
-0.03
-0.003
-1.2
-1.0
-0.6
-0.8
-0.4
-0.2
-3
-1
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