2001. 6. 28
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SEMICONDUCTOR
TECHNICAL DATA
KTA1535T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High Speed Switching.
Ultrasmall-Sized Package permitting applied sets to be
made small and slim.
High Allowable Power Dissipation.
Complementary to KTC3535T
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
_
+
_
+
_
+
_
+
_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-3
A
Pulse
I
CP
-5
Base Current
I
B
600
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600
0.8 )
Type Name
Marking
Lot No.
S D
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1.5A, I
B
=-30mA
-
-130
-165
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-1.5A, I
B
=-30mA
-
-0.85
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-500mA
200
-
560
Transition Frequency
f
T
V
CE
=-2V, I
C
=-500mA
-
160
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
45
-
pF
Swiitching
Time
Turn-On Time
t
on
-
30
-
nS
Storage Time
t
stg
-
90
-
Fall Time
t
f
-
10
-
I
B1
B2
I
INPUT
OUTPUT
50
220
F
PW=20
s
DC 1%
470
F
R
V
1k
L
R
BE
V =5V
CC
V =-5V
-20I =20I =I =-1.5A
B1
B2 C
<
=
2001. 6. 28
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KTA1535T
Revision No : 0
C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-0.2
-0.4
-0.6
-0.8
-1.0
-0.2
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
-1.8
-1.6
-2.0
I =0mA
-2mA
-4mA
-6mA
-8mA
-10mA
-12mA
-14mA
-16mA
B
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-1
-2
-3
-4
-5
-20
-40
-60
-100
-80
-120
-140
-180
-160
-200
I =0mA
-0.1mA
-0.2mA
-0.3mA
-0.4mA
-0.5mA
-0.6mA
-0.7mA
-0.8mA
B
V - I
C
COLLECTOR CURRENT I (A)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
-0.01
-0.03
-0.05
-0.1
-0.3
-1
-0.5
VOLTAGE V (mV)
-0.01
-0.03
-0.1
-1
-3
-0.3
V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
-0.1
-0.3
-0.5
-1
-3
-10
-5
VOLTAGE V (V)
-0.01
-0.03
-0.1
-1
-3
-0.3
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
30
1K
h - I
FE
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
CE
-0.01
-0.03
-0.1
-1
-3
-0.3
I /I =20
B
C
I /I =50
B
C
I /I =50
B
C
COLLECTOR-EMITTER SATURATION
-0.005
CE(sat)
COLLECTOR CURRENT I (A)
C
V - I
CE(sat)
C
VOLTAGE V (V)
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
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KTA1535T
Revision No : 0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
BASE-EMITTER VOLTAGE V (V)
BE
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (A)
C
C (pF)
COLLECTOR CURRENT I (A)
C - V
ob
CB
I - V
C
BE
30
1K
f - I
T
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
CE
C
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
V =-2V
CE
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON A
CERAMIC BOARD
(600mm 0.8mm)
2
10
30
50
100
300
1K
500
-1
-10
-30
-3
-5
f=1MHz
-0.02
-0.1
-0.3
-0.5
-3
-5
-1
-10
-0.05
-0.2
-1
-3
-10
-20
MOUNTED ON A CERAMIC BOARD
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
I MAX
(CONTIN-
UOUS)
C
100mS*
10mS*
1mS*
50
0
S*
DC OPERATI
ON
(600mm 0.8mm)
2
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