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SEMICONDUCTOR
TECHNICAL DATA
KTA702E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A Collector Current is Large.
Collector Saturation Voltage is low.
: V
CE(sat)
-250mV at I
C
=-200mA/I
B
=-10mA.
Complementary to KTC802E.
MAXIMUM RATINGS (Ta=25 )
DIM
MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1
1
1
2
2
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-500
mA
I
CP
(Note)
-1
A
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1
Q1
Q2
2
3
6
5
4
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A
-6
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-10mA
-
100
-250
mV
Transition Frequency
f
T
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
-
260
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
6.5
-
pF
Note : Single pulse Pw=1mS.
* Total Rating.
EQUIVALENT CIRCUIT (TOP VIEW)
S Z
Type Name
1
2
3
4
6
5
Marking
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KTA702E
Revision No : 0
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
Ta=125 C
V =-2V
I /I =20
CE
V =-2V
CE
V =-2V
CE
C B
I /I =20
C B
I /I =50
C B
I /I =20
C B
I /I =10
C B
Ta=25 C
Ta=-40
C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=1
25
C
Ta=2
5 C
Ta
=-40
C
10
1K
30
50
100
300
500
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
-1
-3
-1
-10
-30
-100
-300
-1K
-3
-5
-10
-30
-50
-100
-300
-500
-1K
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
-1
-3
-1
-10
-30
-100
-300
-1K
-3
-5
-10
-30
-50
-100
-300
-500
-1K
0
-1
-0.5
-1.0
-1.5
-3
-5
-10
-30
-50
-100
-300
-500
-1K
f - I
C
COLLECTOR CURRENT I (mA)
T
C
T
TRANSITION FREQUENCY f (MHz)
-1
-3
-10
-30
-100
-300
-1K
-100
-10K
-300
-500
-1K
-3K
-5K
V - I
C
COLLECTOR CURRENT I (mA)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (mV)
-1
-3
-10
-30
-100
-300
-1K
10
1K
30
50
100
300
500
-1
-3
-10
-30
-100
-300
-1K
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
h - I
FE
C
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KTA702E
Revision No : 0
C - V , C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
EB
EMITTER-BASE VOLTAGE V (V)
ob
C
ob
CB
ib
COLLECTOR INPUT CAPACITANCE C (PF)
ob
COLLECTOR OUTPUT CAPACITANCE C (PF)
-0.1
-0.3
1
-1
-3
-10
-30
-100
3
5
10
30
50
100
300
500
1K
ib
C
ib
EB
I =0A
f=1MHz
Ta=25 C
E
COLLECTOR POWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
50
100
150
200
250
150
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