2000. 12. 8
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1772
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
Complementary to KTD1882.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-1
A
Emitter-Cut-off Current
I
EBO
V
EB
=-3V, I
C
=0
-
-
-1
A
DC Current Gain *
h
FE
(1)
V
CE
=-2V, I
C
=-20mA
30
220
-
h
FE
(2) (Note)
V
CE
=-2V, I
C
=-1A
100
160
400
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=-2A, I
B
=-0.2A
-
-0.3
-0.5
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=-2V, I
B
=-0.2A
-
-1.0
-2.0
V
Current Gain Bandwidth Product
f
T
V
CE
=-5V, I
C
=-0.1A
-
80
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
55
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-3
A
Pulse (Note)
I
CP
-7
Base Current (DC)
I
B
-0.6
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : Pulse Width 10mS, Duty Cycle 50%.
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: h
FE
(2) Classification O:100 200 , Y:160 320 , GR:200 400
2000. 12. 8
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KTB1772
Revision No : 0
C
0
COLLECTOR CURRENT I (A)
CE
-16
-12
-8
-20
-4
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
I - V
C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
FE
h - I
C
SATURATION VOLTAGE V V (mV)
CE(sat),
COLLECTOR CURRENT I (mA)
C
CE(sat)
V ,V - I
C
-0.4
-1.0
-1.2
-1.6
1
5
10
30
50
100
300
-0.01
1K
3
500
-10
-3
C
-0.3
-0.1
-1
COLLECTOR CURRENT I (A)
C
f - I
T
T
CURRENT GAIN BANDWIDTH PRODUCT f (MHz)
BE(sat)
1
5
10
50
30
100
300
500
1K
-100
-1K
-3K
V =-2V
CE
-1K
-10
-1
-100
-500
-1K
-3
-10
-30
-100
-30
-300
-3K
BE(sat)
-0.03
V =-5V
CE
I =-1mA
B
I =-2mA
B
I =-3mA
B
I =-4mA
B
I =-5mA
B
I =-6mA
B
I =-7mA
B
I =-8mA
B
I =-9mA
B
I =-10mA
B
CAPACITANCE C (pF)
-1
1
3
5
10
300
500
100
30
50
1K
COLLECTOR-BASE VOLTAGE V (V)
-3
-30
-100
CB
-300
-1K
C - V
ob
I =0
E
CB
f=1MHz
-5K
BE
V (sat)
V (sat)
CE
I /I =10
C B
-1.8
-300
-30
-1
-3
-10
3
-3
-5
-50
-300
-3K
-10K
ob
-10
COLLECTOR POWER DISSIPATION
0
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
100
200
300
400
500
600
700
25
50
75
100
125
150
175
P (mW)
C
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