2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector-Emitter Saturation Voltage
: V
CE(sat)
=-2.0V(Max.).
Complementary to KTA1042D/L.
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+_
+
_
+
_
+
_
+_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification 0:70~140, Y:120~240.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
5
A
Base Current
I
B
0.5
A
Collector Power Dissipation (Tc=25 )
P
C
20
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, I
B
=0
100
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=5V, I
C
=1A
70
-
240
h
FE
(2)
V
CE
=5V, I
C
=4A
20
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4A, I
B
=0.4A
-
-
2.0
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=1A
-
-
1.5
V
Transition Frequency
f
T
V
CE
=5V, I
C
=1A
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
40
-
pF
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+_
+_
+_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27
2/2
KTC2022D/L
Revision No : 4
COLLECTOR POWER DISSIPATION
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
COLLECTOR-EMITTER SATURATION
CE(sat)
0.3
0.1
0.03
0.01
COLLECTOR CURRENT I (A)
C
V - I
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
2
5
10
30
C
COLLECTOR CURRENT I (A)
0.1
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (A)
10
DC CURRENT GAIN h
FE
0.01
COLLECTOR CURRENT I (A)
C
h - I
1.0
2.0
3.0
4.0
5.0
6.0
1.0
2.0
3.0
4.0
5.0
COMMON EMITTER
Tc=25 C
300
250
200
150
100
50
0
I =20mA
B
CE(sat)
C
VOLTAGE V (V)
1
3
10
0.03
0.05
0.1
0.3
0.5
1
2
COMMON EMITTER
I /I =10
C B
Tc=75 C
Tc=25 C
Tc=-25 C
FE
C
0.03
0.1
0.3
1
3
10
30
50
100
300
500
COMMON EMITTER
V =5V
CE
Tc=75 C
Tc=25 C
Tc=-25 C
P (W)
C
25
50
75
100
125
150
100
300
0.3
0.5
1
3
5
10
20
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
C
I MAX.
(CONTINUOUS)
1mS
100mS
*
*
*
DC OPERATION
Tc=25 C
V MAX.
CEO
10mS
4
8
12
16
20
24
*
Tc=25 C
Ta=25 C
1
2
1
2
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