2003. 3. 27
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2983D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f
T
=100MHz(Typ.).
Complementary to KTA1225D/L.
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
D
B
E
K
I
J
Q
H
F
F
M
O
P
L
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+_
+
_
+
_
+
_
+_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
160
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1.5
A
Base Current
I
B
1.0
A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=160V, I
E
=0
-
-
1.0
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
160
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=1mA, I
C
=0
5.0
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=100mA
70
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
1.5
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=500mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=100mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
25
-
pF
Note : h
FE
Classification O:70~140, Y:120~240
DIM
MILLIMETERS
IPAK
D
B
Q
E
H
F
F
C
A
P
L
I
J
1
2
3
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
K
+
_
+
_
+
_
+
_
+_
+_
+_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27
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KTC2983D/L
Revision No : 3
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
0
20
40
C
0
COLLECTOR POWER DISSIPAZTION P (W)
20
f - I
T
C
C
COLLECTOR CURRENT I (A)
0.005
300
T
0
TRANSITION FREQUENCY f (MHz)
30
0.01
0.03
0.1
0.3
1
50
100
COMMON EMITTER
V =10V
Tc=25 C
CE
60
80 100 120 140 160 180
5
10
25
15
30
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
2
4
6
0.2
C
0
COLLECTOR CURRENT I (A)
V - I
CE(sat)
C
C
COLLECTOR CURRENT I (A)
1
3
0.003
1
CE(sat)
COLLECTOR-EMITTER SATURATION
10
DC CURRENT GAIN h
FE
300
0.003
3
1
COLLECTOR CURRENT I (A)
C
C
FE
h - I
0.2
COLLECTOR CURRENT I (A)
0
C
0.2
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
8
10
12
14
16
0.4
0.6
0.8
1.0
COMMON
EMITTER
Tc=25 C
I =2mA
B
4mA
6mA
8mA
12mA
20mA
0mA
0.01
0.03
0.1
0.3
30
50
100
COMMON EMITTER
V =5V
CE
Tc=100 C
Tc=25 C
Tc=-25 C
VOLTAGE V (V)
0.01
0.03
0.1
0.3
0.03
0.05
0.1
0.3
0.5
COMMON EMITTER
I /I =10
C B
Tc=100
C
Tc=25 C
Tc=-25 C
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
COMMON
V =5V
CE
EMITTER
Tc=100
C
Tc=
25 C
Tc=-25 C
Tc=25 C
Ta=25 C
1
2
1
2
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