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Электронный компонент: KTC3114

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2003. 7. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3114
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
High DC Current Gain : h
FE
=600 3600.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note: h
FE
Classification A:600 1800, B:1200 3600
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
600
-
3600
Collector- Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=10mA
100
250
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
3.5
-
pF
Noise Figure
NF(1)
V
CE
=6V, I
C
=0.1mA
f=100Hz, Rg=10k
-
0.5
-
dB
NF(2)
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10k
-
0.3
-
dB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
1.5
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2003. 7. 24
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KTC3114
Revision No : 1
C
COLLECTOR CURRENT I (mA)
0
30
DC CURRENT GAIN h
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
h - I
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
0
COLLECTOR CURRENT I (mA)
C
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.3
1
3
0.01
COLLECTOR-EMITTER SATURATION
10
TRANSITION FREQUENCY f (MHz)
T
-3
-1
-0.3
-0.1
EMITTER CURRENT I (mA)
E
f - I
1
2
3
4
5
6
20
40
60
80
100
120
140
160
COMMON
EMITTER
Ta=25 C
400
200
100
80
60
50
40
30
20
I =10A
B
0
0.2
0.4
0.6
0.8
1.0
1.2
20
40
60
80
100
120
140
160
COMMON
EMITTER
V =6V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
FE
C
10
30
100 200
50
100
300
500
1k
3k
5k
COMMON EMITTER
V =6V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat)
C
VOLTAGE V (V)
CE(sat)
10
30
100
0.03
0.05
0.1
0.3
0.5
1
COMMON EMITTER
I / I =10
C B
Ta=100 C
Ta=25 C
Ta=-25 C
V - I
C
COLLECTOR CURRENT I (mA)
0.1
3
0.1
BE(sat)
BASE-EMITTER SATURATION
BE(sat)
C
VOLTAGE V (V)
0.3
1
10
30
100
0.3
0.5
1
3
5
10
COMMON EMITTER
I /I =10
C B
Ta=25 C
T
E
-10
-30
-100
30
50
100
300
500
1k
2k
COMMON EMITTER
V =10V
Ta=25 C
CE
200
200
2003. 7. 24
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KTC3114
Revision No : 1
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
0.1
0.3
1
3
100
ob
1
COLLECTOR OUTPUT CAPACITANCE
10
ob
CB
C (pF)
10
30
100
3
5
30
50
I =0
f=1MHz
Ta=25 C
E