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Электронный компонент: KTC3531T

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2001. 6. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3531T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) at I
C
=0.5A.
Complementary to KTA1531T.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
_
+
_
+
_
+
_
+
_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=50mA
120
-
400
h
FE
(2)
V
CE
=2V, I
C
=1A(Pulse)
30
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.1
0.3
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=500mA, I
B
=50mA
-
0.85
1.2
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA
-
180
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
15
-
pF
Note : h
FE
Classification Y:120 240, GR(G):200 400
* Package mounted on a ceramic board (600
0.8 )
h Rank
Type Name
Marking
Lot No.
H A
FE
2001. 6. 23
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KTC3531T
Revision No : 0
0.01
COLLECTOR-EMITTER SATURATION
CE
300
100
30
10
COLLECTOR CURRENT I (mA)
C
V - I
h - I
C
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
1
2
3
4
5
6
7
200
400
600
800
CE(sat)
C
1k
3k
10k
0.03
0.05
0.1
0.3
0.5
1.0
I /I =10
C
FE
C
8
I =0mA
B
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
0
200
400
0.2
600
800
C
0.8
0.4
0.6
1.0
CE
I - V
C
CE
1000
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (A)
0
0
0.2
0.4
0.2
0.4
0.6
0.8
C
1.4
0.6
0.8
1.0
1.2
1.6
BE
I - V
C
BE
1.0
1.2
1.4
V =2V
CE
2.0
VOLTAGE V (V)
B
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
300
10
30
10
1
3
30
C
100
1k
V =10V
CE
500
50
100
300
T
1K
2K
f - I
T
C
1
3
10
30
1
FE
DC CURRENT GAIN h
100
300
1k
3k
10k
3
5
10
30
50
100
300
500
V =2V
CE
B
I =1mA
I =2mA
B
I =4mA
B
I =6mA
B
I =8mA
B
I =10mA
B
0.1
0.3
0.5
0.7
0.9
B
I =0mA
I =1mA
B
I =3mA
B
I =5mA
B
I =8mA
B
I =10mA
B
I =15mA
B
I =20mA
B
I =30mA
B
I =50mA
B