2002. 10. 14
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTC3770U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S
21e
|
2
=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : h
FE
Classification A:50~100, B:80~160, C:125~250.
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=10V, I
E
=0
-
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0
-
-
1
A
DC Current Gain
h
FE
(Note1)
V
CE
=10V, I
C
=20mA
50
-
250
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz (Note2)
-
-
1.0
pF
Reverse Transfer Capacitance
C
re
-
0.65
1.15
pF
Transition Frequency
f
T
V
CE
=10V, I
C
=20mA
5
7
-
GHz
Insertion Gain
|S
21e
|
2
V
CE
=10V, I
C
=20mA, f=1GHz
7.5
11.5
-
dB
Noise Figure
NF
V
CE
=10V, I
C
=7mA, f=1GHz
-
1.1
2
dB
h Rank
Type Name
Marking
R
FE
2002. 10. 14
2/5
KTC3770U
Revision No : 0
COLLECTOR CURRENT I (mA)
h - I
FE
DC CURRENT GAIN h
C
COLLECTOR CURRENT I (mA)
C
C
FE
V =10V
300
100
50
30
10
100
30
10
3
1
0.5
500
CE
V =10V
CE
V =10V
CE
COLLECTOR POWER DISSIPATION P (mW)
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
TYPICAL CHARACTERISTICS (Ta=25 C)
50
100
150
0
100
200
300
Ta=25 C
C
COLLECTOR CURRENT I (mA)
T
TRANSITION FREQUENCY f (GHz)
f - I
T
C
REVERSE TRANSFER CAPACITANCE C (pF)
OUTPUT CAPACITANCE C (pF)
ob
re
0.1
COLLECTOR-BASE VOLTAGE V (V)
CB
C , C - V
ob
re
CB
0.3
0.5
1
3
5
10
f=1MHz
C
re
C
ob
0.1
0.3
0.5
1
3
5
1
3
5
10
30
50
100
1
3
5
10
INSERTION GAIN S (dB)
2le
2
1
S - I
2le
C
2
3
5
10
30
50
100
f=1.0GHz
0
5
10
15
FREQUENCY f (GHz)
V =10V
CE
I =20mA
C
INSERTION GAIN S (dB)
2le
2
0.1
S - f
2le
2
0.3
0.5
1
3
0
10
20
30
S
2le
2
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