2004. 8. 19
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3780U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.4dB, |S
21e
|
2
=12dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
6
V
Emitter-Base Voltage
V
EBO
1.5
V
Collector Current
I
C
50
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=10V, I
E
=0
-
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0
-
-
1
A
DC Current Gain
h
FE
V
CE
=5V, I
C
=10mA
50
-
250
Collector Output Capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
-
1.0
pF
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA
5
8
-
GHz
Insertion Gain
|S
21e
|
2
V
CE
=5V, I
C
=10mA, f=1GHz
9
12
-
dB
Noise Figure
NF
V
CE
=5V, I
C
=5mA, f=1GHz
-
1.4
-
dB
Type Name
Marking
R E
PDF 
ZIP