SEMICONDUCTOR
TECHNICAL DATA
KTC3790U
EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.2dB, |S
21e
|
2
=13dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
Note 1 : h
FE
Classification L:50~100, M:80~160, N:125~250.
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
10
V
Emitter-Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=10V, I
E
=0
-
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=1V, I
C
=0
-
-
1
A
DC Current Gain
h
FE
(Note1)
V
CE
=8V, I
C
=20mA
50
-
250
Reverse Transfer Capacitance
C
re
V
CB
=10V, I
E
=0, f=1MHz (Note2)
-
0.35
0.9
pF
Transition Frequency
f
T
V
CE
=8V, I
C
=20mA
-
9
-
GHz
Insertion Gain
|S
21e
|
2
V
CE
=8V, I
C
=20mA, f=1GHz
11
13
-
dB
Noise Figure
NF
V
CE
=8V, I
C
=7mA, f=1GHz
-
1.2
2.5
dB
h Rank
Type Name
Marking
R
FE
2005. 11. 16
1/5
Revision No : 1
2005. 11. 16
2/5
KTC3790U
Revision No : 1
COLLECTOR CURRENT IC (mA)
h
FE
- I
C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT I
C
(mA)
200
100
50
30
10
10
1
300
TRANSITION FREQUENCY f
T
(GHz)
f - I
T
C
REVERSE TRANSFER CAPACITANCE Cre (pF)
1
COLLECTOR-BASE VOLTAGE VCB (V)
Cre - V
CB
20
30
10
5
0.1
0.5
1
3
2
1
5
10
30
20
1
5
20
S
21e
- I
C
S
21e
- f
NF - I
NOISE FIGURE NF (dB)
C
0
1
2
3
4
7
6
5
50 70
10
5
1
70
5
0.5
50
30
10
1
5
10
50 70
0
0.5
5
10
15
FREQUENCY f (GHz)
0.1
3.0
0
12
16
0.5
8
4
20
2.0
1.0
0.5
Ta=25 C
V
CE
=8V
Ta=25 C
V
CE
=8V
Ta=25 C
V
CE
= 8V
f = 1.0GHz
V
CE
= 8V
f = 1.0GHz
Ta=25 C
V
CE
=8V
I
C
=20mA
Ta=25 C
Ta=25 C
f =1.0MHz
2
2
2
INSERTION GAIN S
21e
(dB)
2
S
21e
2
INSERTION GAIN S
21e
(dB)
TYPICAL CHARACTERISTICS
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