2002. 6. 5
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4511
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTA1725.
MAXIMUM RATING (Ta=25)
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.700.30
0.85 MAX
3.200.20
3.000.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.600.50
3.90 MAX
1.20
1.30
2.54
4.500.20
6.80
2.600.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.600.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : h
FE
Classification R:55~110, O:80~160.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
6
A
Base Current
I
B
3
A
Collector Power Dissipation (Tc=25)
P
C
30
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=25mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=4V, I
C
=2A
55
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
-
0.5
V
Transition Frequency
f
T
V
CE
=12V, I
C
=0.5A
-
20
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
150
-
pF
2002. 6. 5
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KTC4511
Revision No : 0
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
A
)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
I - V
BE
BASE-EMITTER VOLTAGE V (V)
BASE CURRENT I (A)
0
0
B
V - I
CE(sat)
B
1
2
3
4
2
4
6
0.5
1.0
1.5
1
2
3
C
BE
2
0
2
4
6
V
O
L
T
A
G
E
V
(
V
)
C
E
(
s
a
t
)
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
I =6A
I =4A
C
I =2A
C
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
A
)
C
0
V =4V
CE
h - I
F
E
D
C
C
U
R
R
E
N
T
G
A
I
N
h
COLLECTOR CURRENT I (A)
10
0.01
1k
50
0.3
0.1
C
FE
C
1
3
10
30
V =4V
CE
100
300
500
0.03
Tc=125 C
D
C
C
U
R
R
E
N
T
G
A
I
N
h
3
COLLECTOR CURRENT I (A)
0.1
0.01
10
30
50
100
0.03
0.3
1
C
10
V =4V
F
E
1k
500
300
CE
h - I
FE
C
I =10mA
B
B
I =20mA
B
I =30mA
B
I =50mA
B
I =80
mA
B
I =1
00mA
B
I
=1
50m
A
B
I
=2
00
mA
C
1
T
c=
-3
0
C
T
c=
25
C
T
c=
12
5
C
Tc=-30
C
Tc=25 C
Tc=125 C
Tc=25 C
Tc=-30 C
th
R - t
TIME t (S)
t
h
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
r
(
C
/
W
)
1k
100
10
1
0.1
0.001
0.01
10
1
1 k
100
0.1
NO HEAT SINK
INFINITE SINK
1
2
1
2
2002. 6. 5
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KTC4511
Revision No : 0
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
M
A
X
I
M
U
M
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
P
(
W
)
C
f - I
T
C
U
T
-
O
F
F
F
R
E
Q
U
E
N
C
Y
f
(
M
H
z
)
EMITTER CURRENT I (A)
0
-0.01
20
-0.3
-0.1
E
T
E
-1
-3
-10
10
30
-0.03
Tc
=1
25
C
V =-12V
CE
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
A
)
3
0.05
0.5
0.1
1
5
10
C
100
10
300
30
0.3
3
SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V (V)
CE
30
Tc
=2
5
C
Tc=
-30
C
10m
s*
100ms*
DC(T
c=25
C)
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX.(PULSED)
C
100
175
0
5
10
15
0
25
50
75
150
125
20
25
40
30
(2)
(1)
(1)Tc=Ta
INFINITE HEAT SINK
(2)NO HEAT SINK
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