1999. 6. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 30W 35W Audio Frequency
Amplifier Output Stage.
Complementary to KTA1726.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification R:55~110, O:80~160.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
6
A
Base Current
I
B
3
A
Collector Power Dissipation (Tc=25 )
P
C
50
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=6V, I
C
=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=25mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=4V, I
C
=2A
55
-
160
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
-
0.5
V
Transition Frequency
f
T
V
CE
=12V, I
C
=0.5A
-
20
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
150
-
pF
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KTC4512
Revision No : 0
COLLECTOR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
I - V
BE
BASE-EMITTER VOLTAGE V (V)
PULSE WIDTH t (sec)
0.1
3
1
10
1
30
10
w
r - t
BASE CURRENT I (A)
0
0
B
V - I
CE(sat)
B
1
2
3
4
2
4
6
0.5
1.0
1.5
1
2
3
C
BE
2
0
2
4
6
th
w
100
300
1000
0.3
3
0.5
5
TRANSITION THERMAL RESISTANCE
VOLTAGE V (V)
CE(sat)
COLLECTOR-EMITTER SATURATION
I =6A
I =4A
C
I =2A
C
COLLECTOR CURRENT I (A)
C
0
V =4V
CE
h - I
FE
DC CURRENT GAIN h
COLLECTOR CURRENT I (A)
10
0.01
1k
50
0.3
0.1
C
FE C
1
3
10
30
V =4V
CE
100
300
500
0.03
Tc=125 C
DC CURRENT GAIN h
3
COLLECTOR CURRENT I (A)
0.1
0.01
10
30
50
100
0.03
0.3
1
C
10
V =4V
FE
1k
500
300
CE
h - I
FE
C
r ( C/W) th
CURVES SHOULD BE APPLIED IN
THERMA LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
NO HE
AT SI
NK
I =10mA
B
B
I =20mA
B
I =30mA
B
I =50mA
B
I =80mA
B
I =100mA
B
I =150mA
B
I
=200mA
C
1
Tc=-30 C
Tc=25
C
T
c=125
C
Tc=-30 C
Tc=25 C
Tc=125 C
Tc=25 C
Tc=-30 C
1999. 6. 24
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KTC4512
Revision No : 0
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
100
150
0
10
20
30
MAXIMUM POWER DISSIPATION P (W)
C
0
f - I
T
CUT-OFF FREQUENCY f (MHz)
EMITTER CURRENT I (A)
0
-0.01
20
-0.3
-0.1
E
T
E
-1
-3
-10
10
30
-0.03
Tc=125 C
V =-12V
CE
COLLECTOR CURRENT I (A)
3
0.05
0.5
0.1
1
5
10
C
100
10
300
30
0.3
3
SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V (V)
CE
30
10ms*
100ms*
DC(Tc=25
C)
*SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
25
50
75
125
40
50
(2)
(1)
(1)Tc=Ta
INFINITE HEAT SINK
(2)NO NEAT SINK
Tc=25 C
Tc=-30 C
I MAX.(PULSED)*
C
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