2001. 4. 9
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4527F
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G
12.30 MAX
0.75 MAX
H
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1
2
3
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15
V
U
D
A
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification R:15 30, O:20 40
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=800V, I
E
=0
-
-
10
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
10
A
Collector-Emitter Sustaning Voltage
V
CEX(SUS)
I
C
=1.5A, I
B1
=-I
B2
=0.3A
L=2mH, Clamped
800
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=1.5A, I
B
=0.3A
-
-
2
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1.5A, I
B
=0.3A
-
-
1.5
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=5V, I
C
=0.2A
15
-
40
h
FE
(2)
V
CE
=5V, I
C
=1A
8
-
-
Collector-Base Breakdown Voltage
BV
CBO
I
C
=1mA, I
E
=0
1100
-
-
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=5mA, R
BE
=
800
-
-
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=1mA, I
C
=0
7
-
-
V
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
60
-
pF
Transition Frequency
f
T
V
CE
=10V, I
C
=0.2A
-
15
-
MHz
Switching
Time
Turn On Time
t
on
I
B1
200
B1
I
CC
V =400V
I
B2
I
B2
20
S
I =0.4A , I =-0.8A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
-
-
0.5
S
Storage Time
t
stg
-
-
3
Fall Time
t
f
-
-
0.3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
1100
V
Collector-Emitter Voltage
V
CEO
800
V
Emitter-Base Voltage
V
EBO
7
V
Collector Current
DC
I
C
3
A
Pulse
I
CP
10
Base Current
I
B
1.5
A
Collector Power Dissipation
(Tc=25 )
P
C
40
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2001. 4. 9
2/3
KTC4527F
Revision No : 0
I - V
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
1
C
0
COLLECTOR CURRENT I (A)
I - V
C
BE
BE
BASE EMITTER VOLTAGE V (V)
0
C
COLLECTOR CURRENT I (A)
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
C
FE
h - I
0.4
0.8
1.2
1.6
I =0mA
B
0
V =5V
CE
C
2.0
2.4
2
3
4
5
6
7
8
9
10
COLLECTOR CURRENT I (A)
C
V , V - I
CE(sat)
C
SATURATION VOLTAGE
0.01
0.05
0.03
0.3
0.1
0.5
1
3
5
I =5I
C
B
V
BE(sat)
V
CE(sat)
0.2
0.4
0.6
0.8
1.2
1.0
COLLECTOR CURRENT I (A)
0.1
C
0.03
SWITCHING CHARACTERISTICS
0.05
0.1
0.3
0.5
1
3
5
10
stg
t
SWITCHING TIME (
S)
0.3
0.5
1
3
5
t
t
on
f
COLLECTOR CURRENT I (A)
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
C
2
5
10
50 100 200
1K
500
SAFE OPERATING AREA
20
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX(PULSE)*
C
C
I MAX(CONTINUOUS)
1mS
*
10
m
S*
100
S*
DC OPE
RAT
ION
10mA
20mA
30mA
250mA
200mA
150mA
100mA
80mA
60mA
50mA
40mA
1
0.3
0.1
0.03
0.01
1
3
3
5
10
30
50
100
V =5V
CE
1
0.01
0.03
0.1
0.3
3
1
2
3
V =400V
CC
5.I 1=-2.5. I 2=I
B
B
C
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
20
V , V (V)
BE(sat)
CE(sat)
BE(sat)
2001. 4. 9
3/3
KTC4527F
Revision No : 0
COLLECTOR CURRENT I (A)
10
0.01
COLLECTOR EMITTER VOLTAGE V (V)
CE
C
20
50 100
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION Pc (W)
AMBIENT TEMPERATIURE Ta ( C)
I 2=-0.3A
B
Pc - Ta
200
500 1K 2K
5K 10K
0
10
0
50
100
150
200
20
30
40
50
60
25
75
125
175
Tc=Ta
INFINITE HEAT SINK
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