2001. 8. 6
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC811E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in h
FE
.
The follwing characteristics are common for Q
1
, Q
2
.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. Q BASE
6. Q COLLECTOR
1
2
1
2
2
1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
30
mA
Collector Power Dissipation
P
C
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100 , I
B
=10
-
0.1
0.3
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1 , f=1 , Rg=10
-
1.0
10
1
Q1
2
3
6
5
4
Q2
* Total Rating
Note : h
FE
Classification Y(4):120 240, GR(6):200 400
V
Type Name
h Rank
FE
1
2
3
4
6
5
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
2001. 8. 6
2/3
KTC811E
Revision No : 0
C
COLLECTOR CURRENT I (mA)
0
40
30
DC CURRENT GAIN h
FE
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.1
BASE-EMITTER SATURATION
BASE CURRENT I (
A)
B
0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
0.1
3k
T
TRANSITION FREQUENCY f (MHz)
10
COLLECTOR-EMITTER SATURATION
0.01
0.1
COLLECTOR CURRENT I (mA)
C
V - I
1
2
3
4
5
6
7
80
120
160
200
240
I =0.2mA
B
COMMON EMITTER
Ta=25 C
FE
C
10
30
100
300
50
100
300
500
1k
CE(sat)
C
VOLTAGE V (V)
CE(sat)
0.3
1
3
10
30
100
300
0.03
0.05
0.1
0.3
0.5
1
Ta
=100
C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
VOLTAGE V (V)
BE(sat)
0.3
1
10
30
100
300
3
0.3
0.5
1
3
5
10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
0.3
1
3
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =10V
Ta=25 C
CE
B
BE
0.2
0.4
0.6
0.8
1.0
1.2
1
3
10
30
100
300
1k
0.5mA
0
1.0mA
2.0mA
3.0mA
5.0mA
6.0mA
10
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
3k
COMMON
EMITTER
V =6V
CE
Ta=10
0
C
Ta=25
C
Ta
=-25
C
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