2003. 3. 5
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC815
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
LOW FREQUENCY AMPLIFIER
FEATURES
Collector-Base Voltage : V
CBO
=60V.
Complementary to KTA539.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
200
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100 A, I
E
=0
60
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
45
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=45V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=3V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=1V, I
C
=50mA
70
-
240
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=10mA
0.6
0.65
0.9
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=150mA, I
B
=15mA
-
0.15
0.4
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=150mA, I
B
=15mA
-
0.83
1.1
V
Transition Frequency
f
T
V
CE
=10V, I
C
=10mA
100
200
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4
-
pF
Note : h
FE
Classification O:70~140, Y:120~240
2003. 3. 5
2/2
KTC815
Revision No : 0
I - V
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
5
C
0
COLLECTOR CURRENT I (mA)
I - V
C
BE
BE
BASE EMITTER VOLTAGE V (V)
0
C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
10
20
30
40
50
60
70
80
90
100
I =50
A
B
I =100
A
B
I =150
A
B
I =200
A
B
I =250
A
B
I =300
A
B
I =350
A
B
0.1
V =1V
CE
C
10
15
20
25
30
35
40
COLLECTOR CURRENT I (mA)
C
V , V - I
CE(sat)
C
SATURATION VOLTAGE
0.01
0.05
0.03
0.3
0.1
0.5
1
3
I =10I
C
B
V
BE(sat)
V
CE(sat)
0.2
0.4
0.6
0.8
1.2
1.0
1
1
3
5
10
30
3
5
10
30
50
10
30
10
3
50
5
1
100
500
300
30
50
100
300
500
1K
V =1V
CE
100
1
3
10
30
300
1
10
100
I =0
f=1MHz
E
V , V (V)
BE(sat)
CE(sat)
BE(sat)
COLLECTOR OUTPUT CAPACITANCE
COLLECTOR BASE VOLTAGE V (V)
CB
C (pF)
ob
ob
C - V
CB
500
COLLECTOR POWER DISSIPATION
P (mW)
AMBIENT TEMPERATURE Ta ( C)
300
400
200
100
0
0
25
125
50
75
100
175
150
700
600
C
Pc - Ta
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