2003. 3. 25
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC9016S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C
re
=0.65pF(Typ.).
Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note) h
FE
Classification F:54 80, G:72 108, H:97 146, I:130 198
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=40V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=5V, I
C
=1mA
54
-
198
Reverse Transfer Capacitance
C
re
V
CE
=6V, f=1MHz, I
E
=0
-
-
1.0
pF
Transition Frequency
f
T
V
CE
=6V, I
C
=1mA, f=200MHz
260
-
-
MHz
Collector-Base Time Constant
C
C
rbb'
V
CE
=6V, I
E
=-1mA, f=30MHz
-
-
30
pS
Noise Figure
NF
V
CE
=6V, I
E
=-1mA, f=100MHz
-
2.2
4.0
dB
Power Gain
G
pe
15
-
-
dB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
20
mA
Emitter Current
I
E
-20
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* P
C
: Package Mounted On 99.5% Alumina (10 8 0.6 )
h Rank
Type Name
Marking
Lot No.
BF
FE
2003. 3. 25
3/3
KTC9016S
Revision No : 1
y - f
re
re
REVERSE TRANSFER CONDUCTANCE g ( )
-200
-800
b (
)
re
REVERSE TRANSFER SUSCEPTANCE
-160
-120
-80
-40
0
-600
-400
-200
0
0
0
INPUT SUSCEPTANCE b (m )
ie
INPUT CONDUCTANCE g (m )
ie
5
10
15
20
25
30
4
8
12
16
20
COMMON EMITTER
V =6V
Ta=25 C
CE
E
I =-1mA
f=200MHz
150
100
50
27
10.7
27
50
100
150
200
f=10.7MHz
E
COMMON EMITTER
V =6V
I =-1mA
Ta=25 C
CE
0
-10
-20
-30
50
40
30
20
10
FORWARD TRANSFER SUSCEPTANCE
fe
b (m )
-40
0
FORWARD TRANSFER CONDUCTANCE g (m )
fe
y - f
ie
y - f
fe
10.7
27
50
100
150
f=200MHz
I =-1mA
E
CE
Ta=25 C
V =6V
COMMON EMITTER
2000
1600
1200
800
400
120
100
80
60
40
20
oe
OUTPUT CONDUCTANCE g ( )
oe
OUTPUT SUSCEPTANCE b (
)
0
0
y - f
oe
I =-1mA
E
CE
Ta=25 C
V =6V
COMMON EMITTER
200
150
27
100
50
f=10.7MHz
COLLECTOR POWER DISSIPATION
Pc (mW)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
150
175
100
200
300
400
500
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
1
2
1
2
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