2003. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTD1411
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : h
FE
=3000(Min.)
(V
CE
=2V, I
C
=1A)
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
60
V
Emitter-Base Voltage
V
EBO
10
V
Collector Current
I
C
4
A
Base Current
I
B
0.5
A
Collector Power Dissipation (Tc=25 )
P
C
15
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
20
A
Emitter Cut-off Current
I
EBO
V
EB
=10V, I
C
=0
-
-
100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
60
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=2V, I
C
=1A
3000
-
-
h
FE
(2)
V
CE
=2V, I
C
=3A
1000
-
-
Saturation Voltage
Collector-Emitter
V
CE(sat)
I
C
=3A, I
B
=30mA
-
-
1.5
V
Base-Emitter
V
BE(sat)
I
C
=3A, I
B
=30mA
-
-
2.0
2/2
KTD1411
Revision No : 2
C
COLLECTOR POWER DISSIPATION P (W)
0
SATURATION VOLTAGE V (V)
CE(sat)
COLLECTOR CURRENT I (A)
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
V - I
h - I
C
COLLECTOR CURRENT I (A)
0.1
0.3 0.5
1
FE
DC CURRENT GAIN h
FE
C
3
5
10
V =2V
CE
CE(sat)
C
50
4
8
12
16
500
1k
3k
5k
10k
30k
COMMON EMITTER
0.1
0
C
0.3 0.5
1
3
5
10
0.4
0.8
1.2
1.6
2.0
1.8
1.4
1.0
0.6
0.2
I - V
BE
BASE EMITTER VOLTAGE V (V)
BE
C
V =3V
0
0
COLLECTOR CURRENT I (A)
C
CE
0.5
1
1.5
2
1
2
3
4
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
1
3
10
100
0.1
C
COLLECTOR CURRENT I (A)
30
5
50
0.3
0.5
1
3
5
10
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
SINGLE NONREPETITIVE
PULSE Tc=25 C
*
I MAX.(PULSED)*
C
C
I MAX.(CONTINUOUS)
100
S
*
1mS*
10mS*
DC OPERATION
Tc=25 C
V MAX.
CEO
100
150
200
25
75
125
175
18
2
6
10
14
I /I =100
B
Tc=Ta
INFINITE HEAT SINK
TEMPERATURE
2003. 7. 24
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