2001. 12. 6
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1624
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTB1124.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification A:100 200, B:140 280, C:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Vollector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
3
A
Collector Current(Pulse)
I
CP
6
A
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=40V, I
E
=0
-
-
1
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
1
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=100
100
-
400
h
FE
(2)
V
CE
=2V, I
C
=3A
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=100
-
0.19
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=2A, I
B
=100
-
0.94
1.2
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50
-
150
-
Collector Output Capacitance
C
ob
V
CB
=10V, f=1 , I
E
=0
-
25
-
Switching
Time
Turn-on Time
t
on
I
B2
470
25
-5V
25V
10I 1=-10I =I =1A
B
B2
C
100
50
VR
I
B1
PW=20
s
DC 1%
R8
INPUT
<
=
-
70
-
nS
Storage Time
t
stg
-
650
-
Fall Time
t
f
-
35
-
* : Package mounted on ceramic substrate(250mm
2
0.8t)
Y
Type Name
h Rank
FE
Lot No.
Marking
2001. 12. 6
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KTD1624
Revision No : 4
COLLECOTR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
10
DC CURRENT GAIN h
FE
0.3
0.1
0.03
0.01
COLLECTOR CURRENT I (A)
C
h - I
CE
COLLECTOR EMITTER VOLTAGE V (V)
0
2
4
6
0
COLLECTOR CURRENT I (A)
0.4
0.8
1.2
1.6
2.0
1.0
2.0
3.0
4.0
5.0
I =0
B
FE
C
1
3
10
30
50
100
300
500
1k
V =2V
CE
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
5mA
10mA
20mA
40mA
60mA
100mA
COLLECTOR CURRENT I (A)
0
0
0.8
1.6
C
2.4
3.2
BASE EMITTER VOLTAGE V (V)
0.4
I - V
C
BE
BE
0.2
0.6
0.8
1.0
1.2
0.4
1.2
2.0
2.8
V =2V
CE
Ta=75 C
25
C
-25
C
C
CE
I - V
C
14
16
18
20
2.0
0.01
VOLTAGE V (mV)
10
100
30
50
500
300
CE(sat)
1K
COLLECTOR CURRENT I (A)
0.1
0.03
0.3
1
C
3
10
V - I
CE(sat)
C
I /I =20
C B
COLLECTOR EMITTER SATURATION
80mA
I =0
B
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
Ta=75 C
Ta=-25 C
Ta=25 C
I /I =20
BASE-EMITTER SATURATION
Ta=25 C
COLLECTOR CURRENT I (A)
0.01
0.03
VOLTAGE V (V)
0.1
0.3
0.5
BE(sat)
1
3
5
3
10
1
0.3
0.1
C
Ta=75 C
Ta=-25 C
C B
10
V - I
BE(sat)
C
2001. 12. 6
3/3
KTD1624
Revision No : 4
GAIN-BANDWIDTH PRODUCT f (MHz)
COLLECTOR CURRENT I (A)
0.03
0.01
10
50
30
0.1
0.3
1
10
3
C
T
1k
300
100
500
T
f - I
C
CE
V =10V
OUTPUW CAPACITANCE C (pF)
COLLECTOR BASE VOLTAGE V (V)
3
1
1
5
3
10
30
100
CB
ob
100
30
10
50
ob
C - V
CB
f=1MHz
5
50
200
COLLECTOR CURRENT I (A)
0.1
COLLECTOR EMITTER VOLTAGE V (V)
CE
C
0.3
1
3
10
30
0.02
0.03
0.1
0.3
0.5
1
3
5
MOUNTED ON CERAMIC
BOARD (250mm
x0.8t)
SAFE OPERATING AREA
Ta=25 C ONE PULSE
100
10
0.05
I
CP
I MAX.
C
1ms
10ms
100
m
s
DC
O
perat
ion
2
C
COLLECTOR POWER DISSIPATION P (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON CERAMIC
SUBSTRATE
(250mm
x0.8t)
Ta=25 C
2
1
2
1
2
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