2001. 11. 29
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SEMICONDUCTOR
TECHNICAL DATA
KTD1824
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
USM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
1. EMITTER
2. BASE
3. COLLECTOR
USM
2.00 0.20
1.25 0.15
0.90 0.10
0.3+0.10/-0.05
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
C
G
H
J
K
L
K
1
3
2
E
B
D
A
J
G
C
L
H
M
M
N
N
M
0.42 0.10
N
0.10 MIN
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
100
nA
I
CEO
V
CE
=20V, I
B
=0
-
-
1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
50
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
40
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
15
V
DC Current Gain
h
FE
(Note)
V
CE
=10V, I
C
=2mA
400
1000
2000
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
0.05
0.2
V
Transition Frequency
f
T
V
CB
=10V, I
E
=-2mA, f=200MHz
-
120
-
MHz
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
15
V
Collector Current
DC
I
C
50
mA
Pulse
I
CP
100
Collector Power Dissipation
P
C
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
h Rank
Type Name
Marking
L
FE
Note : h
FE
Classification A:400~800, B:600~1200, C:1000~2000
2001. 11. 29
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KTD1824
Revision No : 1
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
2
4
6
8
10
20
40
60
80
100
120
V - I
CE(sat) C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
I =10
A
20
A
30
A
40
A
50
A
60
A
70
A
80A
90A
100A
B
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V (V)
0
BE
0
I - V
C
BE
0.4
0.8
1.2
0.2
0.6
1.0
20
40
60
80
100
VOLTAGE V (V)
h - I
FE
C
0.01
1
0.03
0.05
0.1
0.3
0.5
Ta=25 C
Ta=25 C
Ta=75 C
Ta=
25
C
Ta=
-25 C
Ta=25 C
Ta=-25
C
Ta=75 C
Ta=75 C
Ta=25 C
Ta=-25 C
Ta=25 C
0.1
0.3
1
3
10
30
100
C
COLLECTOR CURRENT I (mA)
0.1
0.3
1
3
10
30
100
E
EMITTER CURRENT I (mA)
-0.1
-0.3
0
-1
-3
-10
-30
-100
50
100
150
200
250
0
300
600
900
1200
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C (pF)
C - V
ob
CB
TRANSITION FREQUENCY f (MHz)
T
f - I
T
E
f=1MHz
0
10
30
3
1
100
2
1
3
4
5
6
7
8
I =0
E
V =10V
CE
V =10V
CE
V =10V
CB
I /I =10
C B
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