2002. 6. 17
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTH2369/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH SPEED SWITCHING APPLICATION.
FEATURES
High Frequency Characteristics
: f
T
=500MHz(Min.) (V
CE
=10V, f=100MHz, I
C
=10mA).
Excellent Switching Characteristics.
MAXIMUM RATING (Ta=25)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : *Pulse Test : Pulse Width300S, Duty Cycle2.0%
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
4.5
V
Collector Current
I
C
500
mA
Collector Power Dissipation (Ta=25)
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.4
A
V
CB
=20V, I
E
=0, Ta=125
-
-
30
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
I
E
=10mA, I
B
=0
15
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10A, I
C
=0
4.5
-
-
DC Current *
Gain
KTH2369/A
h
FE
I
C
=10mA, V
CE
=1.0V
40
-
120
KTH2369
I
C
=10mA, V
CE
=1.0V, Ta=-55
20
-
-
KTH2369A
I
C
=10mA, V
CE
=0.35V, Ta=-55
20
-
-
KTH2369
I
C
=100mA, V
CE
=2.0V
20
-
-
KTH2369A
I
C
=100mA, V
CE
=1.0V
20
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=10mA, I
B
=1.0mA
-
-
0.25
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=10mA, I
B
=1.0mA
0.70
-
0.85
V
Transition Frequency
f
T
I
C
=10mA, V
CE
=10V, f=100MHz
500
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=5.0V, I
E
=0, f=1.0MHz
-
-
4.0
pF
Storage Time
t
stg
I
C
=100mA, I
B1
=-I
B2
=10mA, V
CC
=10V
-
-
13
nS
Turn-on Time
t
on
V
CC
=3.0V, I
C
=10mA,
I
B1
=3.0mA, I
B2
=-1.5mA
-
-
12
Turn-off Time
t
off
I
C
=10mA, I
B1
=3.0mA
I
B2
=-1.5mA, V
CC
=3.0V
-
-
15
2002. 6. 17
2/2
KTH2369/A
Revision No : 2
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
m
A
)
C
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
COLLECTOR CURRENT I (mA)
C
V - I
CE(sat)
C
COLLECTOR CURRENT I (mA)
B
A
S
E
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
C
V - I
V
O
L
T
A
G
E
V
(
V
)
B
E
(
s
a
t
)
BE(sat)
C
0.1
0
0.01
1
CE
V =1V
10
100
COLLECTOR CURRENT I (mA)
C
h - I
FE
C
D
C
C
U
R
R
E
N
T
G
A
I
N
h
F
E
50
100
150
200
V
O
L
T
A
G
E
V
(
V
)
C
E
(
s
a
t
)
I /I =10
0.3
0.1
0.3
1
3
10
30
Ta=-40 C
C B
300
100
COMMON EMITTER
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=125 C
0
0.1
0.3
1
3
10
30
300
100
COMMON EMITTER
I /I =10
C B
0.1
0.2
0.3
0.4
0.5
Ta=-40 C
Ta=25 C
0.5
0.7
0.9
1.1
1.3
1.5
Ta=25 C
Ta=125 C
C
O
L
L
E
C
T
O
R
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
C
O
L
L
E
C
T
O
R
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
C
0
50
10
0.1
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V , C - V
ob
CB
1.0
3.0
COMMON
C
ibo
f=1MHz
P
(
W
)
25
100
200
300
400
500
600
700
0.3
3
0
1.0
2.0
3.0
4.0
5.0
Ta=25 C
obo
C
EMITTER
C
O
L
L
E
C
T
O
R
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
C
o
b
(
p
F
)
i
b
(
p
F
)
EMITTER-BASE VOLTAGE V (V)
EB
ib
EB
0.1
0
0.3
COMMON EMITTER
V =1V
CE
T
a=
12
5
C
0.2
0.4
0.6
0.8
1.0
0.5
1
3
5
10
30
T
a=
25
C
T
a=
-4
0
C
50
75
100
125
150
175
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