2001. 10. 29
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SEMICONDUCTOR
TECHNICAL DATA
KTK5134S
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : V
th
=0.5 1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
KD
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Gate Leakage Current
I
GSS
V
GS
= 16V, V
DS
=0V
-
-
1
A
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=100 A, V
GS
=0V
30
-
-
V
Drain Cut-off Current
I
DSS
V
DS
=30V, V
GS
=0V
-
-
1
A
Gate Threshold Voltage
V
th
V
DS
=3V, I
D
=0.1mA
0.5
-
1.5
V
Forward Transfer Admittance
|Y
fs
|
V
DS
=3V, I
D
=50mA
100
-
-
mS
Drain-Source ON Resistance
R
DS(ON)
I
D
=50mA, V
GS
=2.5V
-
1.2
2
Input Capacitance
C
iss
V
DS
=3V, V
GS
=0V, f=1MHz
-
70
-
pF
Reverse Transfer Capacitance
C
rss
V
DS
=3V, V
GS
=0V, f=1MHz
-
23
-
pF
Output Capacitance
C
oss
V
DS
=3V, V
GS
=0V, f=1MHz
-
58
-
pF
Switching Time
Turn-on Time
t
on
V
DD
=3V, I
D
=10mA, V
GS
=0 2.5V
-
60
-
nS
Turn-off Time
t
off
-
120
-
nS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
200
mA
Drain Power Dissipation
P
D
200
mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55 150
2001. 10. 29
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KTK5134S
Revision No : 0
DR
DRAIN REVERSE CURRENT I (A)
DRAIN-SOURCE VOTAGE V (V)
DS
DS
DR
I - V
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
D
0
DS
0
I - V
D
DS
DRAIN CURRENT I (mA)
FORWARD TRANSFER ADMITTANCE
D
Y - I
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (A)
D
DS
(LOW VOLTAGE REGION)
2
COMMON SOURCE
Ta=25 C
V =1.4V
GS
0
0
0.4
Ta=25 C
COMMON
V =1.4V
GS
fs
D
fs
Y (mS)
4
6
8
10
0.1
0.1
0.2
I - V
DS
D
0.2
1.5V
100
DRAIN CURRENT I (mA)
GATE-SOURCE VOTAGE V (V)
1
1
0.1
0
0.3
10
3
30
GS
Ta=25 C
COMMON
D
I - V
1K
300
DS
V =3V
GS
D
2
3
4
5
Ta=-25 C
DRAIN-SOURCE VOLTAGE V (V)
CAPACITANCE C (pF)
0
C - V
DS
DS
0.01
0.05
0.03
0.1
0.5
0.3
1
1.5V
1.6V
1.7V
1.8V
1.9V
2.5V
0.8
1.2
1.6
2.0
1.6V
1.7V
1.8V
1.9V
2.5V
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE
SOURCE
Ta
=10
0
C
1K
100
300
500
V =3V
COMMON SOURCE
Ta=25 C
DS
10
30
50
100
300
500
10
5
300
30
50
100
COMMON EMITTER
V =0
f=1MHz
Ta=25 C
GS
C
rss
30
1.0
0.3
0.1
0.5
3.0 5.0
10
oss
C
iss
C
SOURCE
COMMON
V =0
GS
Ta=25 C
D
I
S
G
DR
2001. 10. 29
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KTK5134S
Revision No : 0
V - I
D
DRAIN CURRENT I (mA)
DRAIN-SOURCE ON VOLTAGE
DS(ON)
D
DS(ON)
V (mV)
SWITCHING TIME t (ns)
DRAIN CURRENT I (mA)
D
D
t - I
COMMON SOURCE
V =3V
DD
P - Ta
D
AMBIENT TEMPERATURE Ta ( C)
0
20
40
50
D
0
DRAIN POWER DISSIPATION P (mW)
60
80
100
120 140
160
100
150
200
250
300
350
D.U. 1%
<
=
V :t , t < 5ns
IN
r
f
(Z =50
)
OUT
Ta=25 C
I
V
2.5V
0
10
s
V
R
OUT
D
V
IN
L
50
DD
Ta=25 C
OUT
(Z =50
)
r
V :t , t < 5ns
D.U. 1%
V =3V
COMMON SOURCE
10
s
2.5V
0
DD
L
V
50
IN
V
R
V
I
D
OUT
IN
DD
=
<
f
V
IN
2.5V
90%
DD
V
0
OUT
V
IN
V
10%
10%
90%
DS
V (ON)
on
t
off
t
f
t
r
t
SWITCHING TIME TEST CIRCUIT
10
30
50
100
300
500
500
300
100
10
30
50
1K
COMMON SOURCE
V =2.5V
Ta=25 C
DS
off
f
t
on
t
r
t
5
30
10
50
3
1
100
t
3
5
10
30
50
100
300
500
1K
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