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Электронный компонент: KTX201U

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GENERAL PURPOSE APPLICATION.
FEATURES
Including two devices in USV.
(Ultra Super mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process
DIM
MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A
1
1.3 0.1
A1
+
_
+
_
+
_
+
_
+
_
1. Q BASE
2. Q , Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. Q COLLECTOR
1
1
1
2
2
2
2002. 6. 14
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTX201U
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
Revision No : 2
Q
1
MAXIMUM RATING (Ta=25)
EQUIVALENT CIRCUIT(TOP VIEW)
1
2
3
5
4
Q1
Q2
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-150
Base Current
I
B
-30
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector Power Dissipation
P
C
*
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
Q
2
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
Base Current
I
B
30
Q
1
Q
2
MAXIMUM RATING (Ta=25)
C
Type Name
h Rank
FE
1
2
3
4
5
Marking
KTX201U
Revision No : 2
2002. 6. 14
2/5
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100, I
B
=10
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2.0
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1, f=1, Rg=10
-
1.0
10
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100, I
B
=-10
-
-0.1
-0.3
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1
-
4.0
7.0
Noise Figure
NF
V
CE
=-6V, I
C
=-0.1, f=1, Rg=10
-
1.0
10
Q
1
ELECTRICAL CHARACTERISTICS (Ta=25)
Q
2
ELECTRICAL CHARACTERISTICS (Ta=25)
Note)h
FE
Classification : Y(4)120~240, GR(6)200~400
Note)h
FE
Classification : Y(4)120~240, GR(6)200~400
2002. 6. 14
3/5
KTX201U
Revision No : 2
C
C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

I





(
m
A
)
0
-40
30
D
C

C
U
R
R
E
N
T

G
A
I
N

h

F
E
3k
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
-0.1
-0.1
B
A
S
E
-
E
M
I
T
T
E
R

S
A
T
U
R
A
T
I
O
N
B
A
S
E

C
U
R
R
E
N
T

I




(
A
)
B
-0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
-0.1
3k
T
T
R
A
N
S
I
T
I
O
N

F
R
E
Q
U
E
N
C
Y

f





(
M
H
z
)
10
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R

S
A
T
U
R
A
T
I
O
N
-0.01
-0.1
COLLECTOR CURRENT I (mA)
C
V - I
-1
-2
-3
-4
-5
-6
-7
-80
-120
-160
-200
-240
I =-0.2mA
B
B
I =-0.5mA
B
I =-1.0mA
B
I =-1.5mA
B
I =-2.0mA
B
I =0mA
COMMON EMITTER
Ta=25 C
FE
C
-10
-30
-100
-300
50
100
300
500
1k
Ta=100 C
Ta=25 C
Ta=-25 C
V =-6V
CE
CE
V =-1V
COMMON EMITTER
CE(sat)
C
V
O
L
T
A
G
E

V













(
V
)
C
E
(
s
a
t
)
-0.3
-1
-3
-10
-30
-100
-300
-0.03
-0.05
-0.1
-0.3
-0.5
-1
Ta
=1
00
C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
V
O
L
T
A
G
E

V














(
V
)
B
E
(
s
a
t
)
-0.3
-1
-10
-30
-100
-300
-3
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
-0.3
-1
-3
-10
-30
-100
-300
30
50
100
300
500
1k
COMMON EMITTER
V =-10V
Ta=25 C
CE
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-3
-10
-30
-100
-300
-1k
COMMON EMITTER
V =-6V
CE
T
a=
10
0
C
T
a=
25
C
T
a=
-2
5
C
Q (PNP TRANSISTOR)
1
2002. 6. 14
4/5
KTX201U
Revision No : 2
C
C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

I





(
m
A
)
0
40
30
D
C

C
U
R
R
E
N
T

G
A
I
N

h

F
E
3
1
0.3
0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.1
B
A
S
E
-
E
M
I
T
T
E
R

S
A
T
U
R
A
T
I
O
N

B
A
S
E

C
U
R
R
E
N
T

I





(
A
)
B
0.3
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
f - I
C
COLLECTOR CURRENT I (mA)
0.1
3k
T
T
R
A
N
S
I
T
I
O
N

F
R
E
Q
U
E
N
C
Y

f





(
M
H
z
)
10
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R

S
A
T
U
R
A
T
I
O
N
0.01
0.1
COLLECTOR CURRENT I (mA)
C
V - I
1
2
3
4
5
6
7
80
120
160
200
240
I =-0.2mA
B
COMMON EMITTER
Ta=25 C
FE
C
10
30
100
300
50
100
300
500
1k
CE(sat)
C
V
O
L
T
A
G
E

V













(
V
)
C
E
(
s
a
t
)
0.3
1
3
10
30
100
300
0.03
0.05
0.1
0.3
0.5
1
Ta
=1
00
C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I /I =10
C B
C
BE(sat)
V
O
L
T
A
G
E

V













(
V
)
B
E
(
s
a
t
)
0.3
1
10
30
100
300
3
0.3
0.5
1
3
5
10
COMMON EMITTER
I /I =10
Ta=25 C
C B
T
C
0.3
1
3
10
30
100
300
30
50
100
300
500
1k
COMMON EMITTER
V =10V
Ta=25 C
CE
B
BE
0.2
0.4
0.6
0.8
1.0
1.2
1
3
10
30
100
300
1k
0.5
0
1.0
2.0
3.0
5.0
6.0
10
COMMON EMITTER
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
3k
COMMON
EMITTER
V =6V
CE
T
a=
10
0
C
T
a=
25
C
T
a=
-2
5
C
Q (NPN TRANSISTOR)
2
2002. 6. 14
5/5
KTX201U
Revision No : 2
C
C
O
L
L
E
C
T
O
R

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

P




(
m
W
)
0
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
25
50
75
100
150
50
100
150
200
250
125