2002. 3. 29
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SEMICONDUCTOR
TECHNICAL DATA
KTX211U
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in US6.
(Ultra Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM
MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A
1
1.3 0.1
A1
5
+
_
+
_
+
_
+
_
+
_
1. Q (EMITTER)
4. Q COMMON (EMITTER)
3. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q (COLLECTOR)
1
2
2. Q (BASE)
1
1
2
2
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25)
E
C
Q
1
B
R1
R2
COMMON
OUT
Q
2
2
IN
Q
R1=2.2K
R2=2.2K
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-500
I
CP
*
-1
A
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
V
O
50
V
Input Voltage
V
I
12, -10
V
Output Current
I
O
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Dissipation
P
D
*
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
BF
Type Name
1
2
3
4
6
5
Q2 MAXIMUM RATING (Ta=25)
Q1, Q2 MAXIMUM RATING (Ta=25)
Marking
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
* Single pulse Pw=1mS.
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KTX211U
Revision No : 1
Q1 ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Output Cut-off Current
I
O(OFF)
V
O
=50V, V
I
=0
-
-
500
DC Current Gain
G
I
V
O
=5V, I
O
=20
20
-
-
Output Voltage
V
O(ON)
I
O
=10, I
I
=0.5
-
0.1
0.3
V
Input Voltage (ON)
V
I(ON)
V
O
=0.3V, I
O
=20
-
1.83
3
V
Input Voltage (OFF)
V
I(OFF)
V
O
=5V, I
O
=0.1
0.5
1.15
-
V
Transition Frequency
f
T
*
V
O
=10V, I
O
=5
-
250
-
Input Current
I
I
V
I
=5V
-
-
3.8
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
E
=-10A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10A
-6
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-10mA
-
-100
-250
mV
Transition Frequency
f
T
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
-
260
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
6.5
-
pF
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KTX211U
Revision No : 1
C - V , C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
EB
EMITTER-BASE VOLTAGE V (V)
Q (PNP TRANSISTOR)
ob
1
Q
2
Q
2
Q
2
C
ob
CB
i
b
C
O
L
L
E
C
T
O
R
I
N
P
U
T
C
A
P
A
C
I
T
A
N
C
E
C
(
P
F
)
o
b
C
O
L
L
E
C
T
O
R
O
U
T
P
U
T
C
A
P
A
C
I
T
A
N
C
E
C
(
P
F
)
-0.1
-0.3
1
-1
-3
-10
-30
-100
3
5
10
30
50
100
300
500
1K
ib
C
ib
EB
I =0A
f=1MHz
Ta=25 C
E
C
O
L
L
E
C
T
O
R
L
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
P
(
m
W
)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
50
100
150
200
250
150
INPUT ON VOLTAGE V (V)
O
U
T
P
U
T
C
U
R
R
E
N
T
I
(
m
A
)
O
I(ON)
I - V
O
I(ON)
O
Ta=100 C
0.3
10
0.1
0.5
0.3
1
3
5
100
50
30
V =0.2V
1
3
Ta=-25 C
Ta=25 C
10
0.1
INPUT OFF VOLTAGE V (V)
O
U
T
P
U
T
C
U
R
R
E
N
T
I
(
A
)
O
I(OFF)
I - V
O
I(OFF)
V =5V
3.0
1.0
0
30
100
50
0.5
2 .0
1.5
2.5
O
300
1k
500
3k
T
a=
-2
5
C
T
a=
10
0
C
T
a=
25
C
OUTPUT CURRENT I (mA)
D
C
C
U
R
R
E
N
T
G
A
I
N
G
I
O
G - I
I
O
3
1
V =5V
O
10
30
100
Ta=
100
C
Ta=25 C
Ta=-25 C
5
3
10
100
30
50
300
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