KTX213E
2002. 10. 30
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX213E
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+_
+
_
+
_
+
_
+
_
1. Q (EMITTER)
4. Q COMMON (EMITTER)
3. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q (COLLECTOR)
1
2
2. Q (BASE)
1
1
2
2
EQUIVALENT CIRCUIT
Q1 MAXIMUM RATING (Ta=25 )
E
C
Q
1
B
R1
R2
COMMON
OUT
Q
2
2
IN
Q
R1=47K
R2=47K
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
* Total Raing.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-15
V
Collector-Emitter Voltage
V
CEO
-12
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-500
I
CP
*
-1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
V
O
50
V
Input Voltage
V
I
40, -10
V
Output Current
I
O
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Power Dissipation
P
D
*
200
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
BH
Type Name
1
2
3
4
6
5
Q2 MAXIMUM RATING (Ta=25 )
Q1, Q2 MAXIMUM RATING (Ta=25 )
Marking
EPITAXIAL PLANAR PNP/NPN TRANSISTOR
* Single pulse Pw=1mS.
2002. 10. 30
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KTX213E
Revision No : 0
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Output Cut-off Current
I
O(OFF)
V
O
=50V, V
I
=0
-
-
500
DC Current Gain
G
I
V
O
=5V, I
O
=10
20
-
-
Output Voltage
V
O(ON)
I
O
=10 , I
I
=0.5
-
0.1
0.3
V
Input Voltage (ON)
V
I(ON)
V
O
=0.2V, I
O
=5
-
2.8
5.0
V
Input Voltage (OFF)
V
I(OFF)
V
O
=5V, I
O
=0.1
1.0
1.2
-
V
Transition Frequency
f
T
*
V
O
=10V, I
O
=5
-
200
-
Input Current
I
I
V
I
=5V
-
-
0.18
Note : * Characteristic of Transistor Only.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
E
=-10 A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A
-6
-
-
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-10mA
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-200mA, I
B
=-10mA
-
-100
-250
mV
Transition Frequency
f
T
V
CE
=-2V, I
C
=-10mA, f
T
=100MHz
-
260
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
6.5
-
pF
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KTX213E
Revision No : 0
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
Ta=125
C
V =-2V
I /I =20
CE
V =-2V
CE
V =-2V
CE
C B
I /I =20
C B
I /I =50
C B
I /I =20
C B
I /I =10
C B
Ta=25
C
Ta=-4
0 C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C Ta=-40 C
10
1K
30
50
100
300
500
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
-1
-3
-1
-10
-30
-100
-300
-1K
-3
-5
-10
-30
-50
-100
-300
-500
-1K
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
-1
-3
-1
-10
-30
-100
-300
-1K
-3
-5
-10
-30
-50
-100
-300
-500
-1K
0
-1
-0.5
-1.0
-1.5
-3
-5
-10
-30
-50
-100
-300
-500
-1K
f - I
C
COLLECTOR CURRENT I (mA)
T
C
T
TRANSITION FREQUENCY f (MHz)
-1
-3
-10
-30
-100
-300
-1K
-100
-10K
-300
-500
-1K
-3K
-5K
V - I
C
COLLECTOR CURRENT I (mA)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (mV)
-1
-3
-10
-30
-100
-300
-1K
10
1K
30
50
100
300
500
-1
-3
-10
-30
-100
-300
-1K
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
Q (PNP TRANSISTOR)
C
h - I
FE
1
C
2002. 10. 30
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KTX213E
Revision No : 0
C - V , C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
EB
EMITTER-BASE VOLTAGE V (V)
Q (PNP TRANSISTOR)
ob
1
C
ob
CB
ib
COLLECTOR INPUT CAPACITANCE C (PF)
ob
COLLECTOR OUTPUT CAPACITANCE C (PF)
-0.1
-0.3
1
-1
-3
-10
-30
-100
3
5
10
30
50
100
300
500
1K
ib
C
ib
EB
I =0A
f=1MHz
Ta=25 C
E
COLLECTOR LPOWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25
50
75
100
125
50
100
150
200
250
150
I - V
0.1
100
O
0.3
OUTPUT CURRENT I (mA)
O
I(ON)
0.3
1
3
10
30
1
3
5
10
30
50
100
0.5
Q
O
V =0.2V
I(ON)
INPUT ON VOLTAGE V (V)
Ta=100 C
Ta=25 C
Ta=-25 C
2
I - V
O
OUTPUT CURRENT I (
A)
O
I(OFF)
I(OFF)
INPUT OFF VOLTAGE V (V)
30
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
100
300
500
1k
3k
5k
10k
Q
2
V =5V
O
Ta=100 C
Ta
=25 C
Ta=-25
C
G - I
O
OUTPUT CURRENT I (mA)
1
3
10
I
DC CURRENT GAIN G
I
O
30
100
10
30
50
100
500
300
Q
2
V =5V
O
Ta=100 C
Ta=25 C
Ta=-25 C
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