POWER MANAGEMENT.

FEATURES

Including two devices in US6.
(Ultra Super mini type with 6 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.

DIM

MILLIMETERS

D
G

US6

2.00 0.20

1.25 0.1

2.1 0.1

0.2+0.10/-0.05

0-0.1

0.9 0.1

0.65

0.15+0.1/-0.05

1.3 0.1

+
_
+
_
+
_

+
_

1. Q EMITTER

4. Q SOURCE

3. Q DRAIN

5. Q GATE

6. Q COLLECTOR

2. Q BASE

2003. 11. 20

1/6

SEMICONDUCTOR

TECHNICAL DATA

KTX321U

EPITAXIAL PLANAR PNP TRANSISTOR

N CHANNEL MOS FIELD EFFECT TRANSISTOR

Revision No : 0

MAXIMUM RATING (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

CBO

-15

Collector-Emitter Voltage

CEO

-12

Emitter-Base Voltage

EBO

-6

Collector Current

-500

CP *

-1

Collector Power Dissipation

C *

150

Junction Temperature

150

Storage Temperature Range

stg

-55 150

MAXIMUM RATING (Ta=25 )

Type Name

MARKING

EQUIVALENT CIRCUIT (TOP VIEW)

* Single Pulse PW=1mS.
** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

Gate-Source Voltage

GSS

DC Drain Current

100

Drain Power Dissipation

C **

150

Channel Temperature

150

Storage Temperature Range

stg

-55 150

** 120mW per element must not be exceeded. Each terminal mounted on a recommended land.

KTX321U

Revision No : 0

2003. 11. 20

2/6

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

CBO

=-15V, I

-100

Emitter Cut-off Current

EBO

=-6V, I

-100

Collector-Base Breakdown Voltage

(BR)CBO

=-10 A

-15

Collector-Emitter Breakdown Voltage

(BR)CEO

=-1mA

-12

Emitter-Base Breakdown Voltage

(BR)EBO

=-10 A

-6

DC Current Gain

=-2V, I

=-10mA

270

680

Collector-Emitter Saturation Voltage

CE(sat)

=-200mA, I

=-10mA

-100

-250

Transition Frequency

=-2V, I

=-10mA, f

=100MHz

260

MHz

Collector Output Capacitance

=-10V, I

=0, f=1MHz

6.5

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

GSS

= 20V, V

=0V

Drain-Source Breakdown Voltage

(BR)DSS

=100 A, V

=0V

Drain Cut-off Current

DSS

=30V, V

=0V

Gate Threshold Voltage

=3V, I

=0.1mA

0.5

1.5

Forward Transfer Admittance

=3V, I

=10mA

Drain-Source ON Resistance

DS(ON)

=10mA, V

=2.5V

Input Capacitance

iss

=3V, V

=0V, f=1MHz

8.5

Reverse Transfer Capacitance

rss

=3V, V

=0V, f=1MHz

3.3

Output Capacitance

oss

=3V, V

=0V, f=1MHz

9.3

Switching Time

Turn-on Time

=5V, I

=10mA, V

=0 5V

Turn-off Time

off

160

2003. 11. 20

3/6

KTX321U

Revision No : 0

COLLECTOR CURRENT I (mA)

BASE-EMITTER VOLTAGE V (V)

I - V

Ta=125

V =-2V

I /I =20

V =-2V

C B

I /I =20

C B

I /I =50

C B

I /I =20

C B

I /I =10

C B

Ta=25

Ta=-4

0 C

Ta=125 C

Ta=25 C

Ta=-40 C

Ta=25 C

Ta=125 C

Ta=25 C

Ta=-40 C

Ta=25 C

Ta=125

Ta=25 C Ta=-40 C

100

300

500

V - I

COLLECTOR CURRENT I (mA)

CE(sat)

COLLECTOR-EMITTER SATURATION

VOLTAGE V (mV)

-1

-3

-1

-10

-30

-100

-300

-1K

-3

-5

-10

-30

-50

-100

-300

-500

-1K

V - I

COLLECTOR CURRENT I (mA)

CE(sat)

COLLECTOR-EMITTER SATURATION

VOLTAGE V (mV)

-1

-3

-1

-10

-30

-100

-300

-1K

-3

-5

-10

-30

-50

-100

-300

-500

-1K

-1

-0.5

-1.0

-1.5

-3

-5

-10

-30

-50

-100

-300

-500

-1K

f - I

COLLECTOR CURRENT I (mA)

TRANSITION FREQUENCY f (MHz)

-1

-3

-10

-30

-100

-300

-1K

-100

-10K

-300

-500

-1K

-3K

-5K

V - I

COLLECTOR CURRENT I (mA)

BE(sat)

BASE-EMITTER SATURATION

VOLTAGE V (mV)

-1

-3

-10

-30

-100

-300

-1K

100

300

500

-1

-3

-10

-30

-100

-300

-1K

DC CURRENT GAIN h

COLLECTOR CURRENT I (mA)

h - I

Q (PNP TRANSISTOR)

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4/6

KTX321U

Revision No : 0

C - V , C - V

COLLECTOR-BASE VOLTAGE V (V)

EMITTER-BASE VOLTAGE V (V)

COLLECTOR INPUT CAPACITANCE C (PF)

COLLECTOR OUTPUT CAPACITANCE C (PF)

-0.1

-0.3

-1

-3

-10

-30

-100

100

300

500

I =0A

f=1MHz

Ta=25 C

COLLECTOR POWER DISSIPATION P (mW)

AMBIENT TEMPERATURE Ta ( C)

Pc - Ta

100

125

100

150

200

150

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KTX321U

Revision No : 0

DRAIN REVERSE CURRENT I (mA)

DRAIN-SOURCE VOTAGE V (V)

I - V

DRAIN-SOURCE VOLTAGE V (V)

DRAIN CURRENT I (mA)

I - V

DRAIN CURRENT I (mA)

FORWARD TRANSFER ADMITTANCE

Y - I

DRAIN-SOURCE VOLTAGE V (V)

DRAIN CURRENT I (mA)

(LOW VOLTAGE REGION)

COMMON SOURCE

Ta=25 C

V =1.2V

0.2

0.1

Ta=25 C

COMMON

V =0.9V

Y (mS)

30 50

COMMON SOURCE

V =3V

0.2

0.3

0.4

0.5

0.6

0.4

0.6

0.8

1.0

I - V

Ta=25 C

100

300

100

1.4V

2.5V

2.2V

2.0V

1.8V

1.6V

SOURCE

1.0V

1.05V

1.1V

1.15V

1.2V

2.5V

0.01

0.1

100

0.03

0.3

DRAIN CURRENT I (mA)

GATE-SOURCE VOTAGE V (V)

0.1

0.01

0.03

0.3

Ta=25 C

COMMON SOURCE

I - V

100

V =3V

Ta=-25 C

Ta=100 C

COMMON SOURCE

Ta=25 C

f=1MHz

V =0

DRAIN-SOURCE VOLTAGE V (V)

CAPACITANCE C (pF)

0.1

0.5

0.3

C - V

rss

oss

iss

5
3

50
30

100

-0.4

-0.8

-1.2

-1.6

COMMON SOURCE
V =0

Ta=25 C

Q (N CHANNEL MOS FIELD EFFECT TRANSISTOR)

2003. 11. 20

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KTX321U

Revision No : 0

V - I

DRAIN CURRENT I (mA)

DRAIN-SOURCE ON VOLTAGE

DS(ON)

V (V)

SWITCHING TIME t (ns)

DRAIN CURRENT I (mA)

t - I

COMMON SOURCE

V =5V

P - Ta

AMBIENT TEMPERATURE Ta ( C)

100

DRAIN POWER DISSIPATION P (mW)

100

120 140

160

200

300

150

250

D.U. 1%

<
=

V :t , t < 5ns

IN r

(Z =50

)

OUT

Ta=25 C

�

OUT

Ta=25 C

OUT

(Z =50

)

V :t , t < 5ns

D.U. 1%

V =5V

COMMON SOURCE

�

OUT

=
<

90%

OUT

10%

90%

V (ON)

off

SWITCHING TIME TEST CIRCUIT

100

COMMON SOURCE

Ta=25 C

V =2.5V

100

300

500

off

0.005

0.01

0.03

0.05

0.1

0.3

0.5

100

Электронный компонент: KTX321U