2002. 1. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTX401E
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
A1
B1
C
TESV
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
5
4
P
P
P
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
MARK SPEC
C
Type Name
h Rank
FE
1
2
3
4
5
Marking
Type
KTX401E
KTX401E
Q
1
h
FE
Rank : Y
Q
1
h
FE
Rank : GR
Mark
CD
CE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
Base Current
I
B
30
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
100
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
-
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TRANSISTOR Q
1
DIODE D
1
2002. 1. 24
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KTX401E
Revision No : 1
Note) h
FE
Classification Y(4):120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2
120
-
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=100 , I
B
=10
-
0.1
0.25
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1
80
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
2.0
3.5
Noise Figure
NF
V
CE
=6V, I
C
=0.1 , f=1 , Rg=10
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.60
-
V
V
F(2)
I
F
=10mA
-
0.72
-
V
F(3)
I
F
=100mA
-
0.90
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
Total Capacitance
C
T
V
R
=0, f=1
-
0.9
3.0
Reverse Recovery Time
t
rr
I
F
=10
-
1.6
4.0
DIODE D
1
TRANSISTOR Q
1
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