2003. 3. 11
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX403U
EPITAXIAL PLANAR NPN TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
SWITCHING APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
5
4
C
C
A1
1.3 0.1
A1
+
_
+
_
+
_
+
_
+
_
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
CK
Type Name
1
2
3
4
5
Marking
TRANSISTOR Q
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
15
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
6
Collector Current
I
C
500
I
CP
*
1
A
Collector Power Dissipation
P
C
100
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~125
DIODE (SBD) D
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
30
V
Reverse Voltage
V
R
30
V
Maximum (Peak) Forward Current
I
FM
300
Average Forward Current
I
O
200
Surge Current (10mS)
I
FSM
1
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
2003. 3. 11
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KTX403U
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q
1
DIODE (SBD) D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=15V, I
E
=0
-
-
100
Collector-Base Breakdown Voltage
V
(BR)CBO
I
E
=10
15
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1
12
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10
6
-
-
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=10
270
-
680
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=200 , I
B
=10
-
90
250
Transition Frequency
f
T
V
CE
=2V, I
C
=10 , f=100
-
320
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
7.5
-
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.22
-
V
V
F(2)
I
F
=10mA
-
0.29
-
V
F(3)
I
F
=100mA
-
0.38
-
V
F(4)
I
F
=200mA
-
0.43
0.55
Reverse Current
I
R
V
R
=30V
-
-
50
Total Capacitance
C
T
V
R
=0, f=1
-
50
-
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KTX403U
Revision No : 2
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
Ta=125 C
V =2V
I /I =20
CE
V =2V
CE
V =2V
CE
C B
I /I =20
C B
I /I =50
C B
I /I =20
C B
I /I =10
C B
Ta=25 C
Ta=-40 C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=25 C Ta=-40 C
10
1K
30
50
100
300
500
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
1
3
1
10
30
100
300
1K
3
5
10
30
50
100
300
500
1K
V - I
C
COLLECTOR CURRENT I (mA)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (mV)
1
3
1
10
30
100
300
1K
3
5
10
30
50
100
300
500
1K
0
1
0.5
1.0
1.5
3
5
10
30
50
100
300
500
1K
f - I
C
COLLECTOR CURRENT I (mA)
T
C
T
TRANSITION FREQUENCY f (MHz)
1
3
10
30
100
300
1K
100
10K
300
500
1K
3K
5K
V - I
C
COLLECTOR CURRENT I (mA)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (mV)
1
3
10
30
100
300
1K
10
1K
30
50
100
300
500
1
3
10
30
100
300
1K
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
Q (NPN TRANSISTOR)
C
h - I
FE
C
1
2003. 3. 11
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KTX403U
Revision No : 2
C - V , C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
EB
EMITTER-BASE VOLTAGE V (V)
ob
C
ob
CB
ib
COLLECTOR INPUT CAPACITANCE C (PF)
ob
COLLECTOR OUTPUT CAPACITANCE C (PF)
0.1
0.3
1
1
3
10
30
100
3
5
10
30
50
100
300
500
1K
ib
C
ib
EB
I =0A
f=1MHz
Ta=25 C
E
I - V
R
REVERSE VOLTAGE V (V)
0
5
REVERSE CURRENT I (
A)
R
R
0.5
1
5
R
10
I - V
F
FORWARD VOLTAGE V (mV)
F
T
FORWARD CURRENT I (mA)
F
1
Ta=25 C
F
0
100
-1
10
1
10
2
10
-4
10
-3
10
-2
10
20
25
REVERSE VOLTAGE V (V)
5
5
10
50
0
R
15
10
100
C - V
T
R
30
200
300
400
500
10
15
20
25
30
TOTAL CAPACITANCE C (pF)
Ta=25 C
f=1MHz
Ta=25 C
D (SBD)
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