2002. 8. 13
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SEMICONDUCTOR
TECHNICAL DATA
KTX411T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 2
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
B
D
E
TSV
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
B
E
C
L
H
J
J
I
2
3
1
5
4
+
_
+
_
+
_
+
_
+
_
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
25
V
Reverse Voltage
V
R
20
V
Average Forward Current
I
O
1.0
A
Non-Repetitive Peak Surge current
I
FSM
3
Junction Temperature
T
j
125
Storage Temperature
T
stg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
2
3
5
4
MARK SPEC
* Package mounted on a ceramic board (600
0.8 )
h Rank
FE
Type Name
Marking
Lot No.
C
1
2
3
5
4
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Emitter Current
I
E
-1
A
Collector Power Dissipation
P
C
*
0.9
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
DIODE D
1
Type
KTX411T
KTX411T
Q
1
h
FE
Rank : Y
Q
1
h
FE
Rank : GR
Mark
CE
CF
TRANSISTOR Q
1
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KTX411T
Revision No : 2
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
DC Current Gain
h
FE
(1) (Note)
V
CE
=2V, I
C
=50
120
-
400
h
FE
(2)
V
CE
=2V, I
C
=1A (Pulse)
30
-
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=500 , I
B
=50
-
0.1
0.3
V
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=500 , I
B
=50
-
0.85
1.2
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50
-
180
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1
-
15
-
Note) h
FE
Classification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
DIODE D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Forward Voltage
V
F
I
F
=1.0A
-
0.4
0.45
V
Reverse Current
I
R
V
R
=20V
-
-
200
TRANSISTOR Q
1
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KTX411T
Revision No : 2
REVERSE CURRENT I (mA)
R
0.1
m
0
REVERSE VOLTAGE V (V)
R
I - V
R
R
0.1
0.2
0.3
0.4
0.5
1m
10m
100m
1
FORWARD VOLTAGE V (V)
FORWARD CURRENT I (A)
F
F
I - V
F F
Ta=125 C
Ta=75 C
Ta=
25 C
Ta=-25 C
0
10
2
0.1
1
10
100
10
1
10
20
30
40
Ta=125 C
Ta=75 C
Ta=25 C
Ta=-25 C
D (DIODE)
1
Q (NPN TRANSISTOR)
1
0.01
COLLECTOR-EMITTER SATURATION
CE
300
100
30
10
COLLECTOR CURRENT I (mA)
C
V - I
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
1
2
3
4
5
6
7
200
400
600
800
CE(sat)
C
1k
3k
10k
0.03
0.05
0.1
0.3
0.5
1.0
I /I =10
C
8
I =0mA
B
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
0
200
400
0.2
600
800
C
0.8
0.4
0.6
1.0
CE
I - V
C
CE
1000
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (A)
0
0
0.2
0.4
0.2
0.4
0.6
0.8
C
1.4
0.6
0.8
1.0
1.2
1.6
BE
I - V
C
BE
1.0
1.2
1.4
V =2V
CE
2.0
VOLTAGE V (V)
B
B
I =1mA
I =2mA
B
I =4mA
B
I =6mA
B
I =8mA
B
I =10mA
B
0.1
0.3
0.5
0.7
0.9
B
I =0mA
I =1mA
B
I =3mA
B
I =5mA
B
I =8mA
B
I =10mA
B
I =15mA
B
I =20mA
B
I =30mA
B
I =50mA
B
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