2002. 1. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTX511T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX511T consists of two chips which are equivalent to the
KTA1532T and the KDR701S, respectively.
Ultrasmall-sized package permiting applied sets to be made small
and slim (mounting height 0.7 ).
DIM MILLIMETERS
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
3
5
1
6
4
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. D ANODE
4. Q , D COMMON (COLLECTOR, CATHODE)
5. Q , D COMMON (COLLECTOR, CATHODE)
6. Q , D COMMON (COLLECTOR, CATHODE)
1
1
1
1
1
1
1
1
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-1.5
A
Pulse
I
CP
-3
A
Base Current
I
B
-300
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600
0.8 )
1
2
3
6
5
4
Q1
D1
EQUIVALENT CIRCUIT (TOP VIEW)
Type Name
Marking
Lot No.
D A
1
2
3
6
5
4
MAXIMUM RATING (Ta=25 )
Transistor Q
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
30
V
Reverse Voltage
V
R
30
V
Average Forward Current
I
O
0.7
A
Non-Repetitive Peak Surge Current
I
FSM
5
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 150
Diode (SBD) D
1
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KTX511T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-750mA, I
B
=-15mA
-
-120
-180
mV
I
C
=-1.5A, I
B
=-30mA
-
-210
-320
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-750mA, I
B
=-15mA
-
-0.85
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-100mA
200
-
560
Transition Frequency
f
T
V
CE
=-2V, I
C
=-300mA
-
210
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
30
-
pF
Swiitching
Time
Turn-On Time
t
on
-
50
-
nS
Storage Time
t
stg
-
90
-
Fall Time
t
f
-
15
-
Transistor Q
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1mA
30
-
-
V
Forward Voltage
V
F
I
F
=0.7A
-
-
0.55
V
Reverse Current
I
R
V
R
=30V
80
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
190
-
pF
Reverse Recover Time
t
rr
I
F
=I
R
=100mA
-
7.5
-
ns
Diode (SBD) D
1
I
B1
B2
I
INPUT
OUTPUT
50
220
F
PW=20
s
DC 1%
470
F
R
V
B
R
L
R
BE
V =5V
CC
V =-5V
-20I =20I =I =-750mA
B1
B2 C
<
=
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KTX511T
Revision No : 1
V - I
C
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-0.2
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
-1.8
-1.6
-2.0
CE(sat)
C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
I =0mA
-2mA
-4mA
-6mA
-8mA
-10mA
-20mA
-50mA
-30mA
-40mA
B
C
COLLECTOR CURRENT I (A)
BASE-EMITTER VOLTAGE V (V)
0
BE
0
I - V
C
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.1
-0.2
-0.3
-0.5
-0.4
-0.6
-0.7
-0.9
-0.8
-1.0
-10
-30
-50
-100
-300
-1K
-500
VOLTAGE V (mV)
-0.01
-0.03
-0.1
-1
-3
-0.3
V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
-0.1
-0.3
-0.5
-1
-3
-10
-5
VOLTAGE V (V)
-0.01
-0.03
-0.1
-1
-3
-0.3
-0.01
-0.03
-0.1
-1
-3
-0.3
Ta=75
C
I /I =20
C B
I /I =50
Ta=75 C
Ta=25 C
Ta=-25 C
C B
I /I =50
C B
Ta=7
5 C
Ta=2
5 C
Ta=-25
C
Ta=-
25
C
Ta=25 C
30
1K
h - I
FE
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
Ta=-25
C
V =-2V
CE
Ta=75 C
Ta=25 C
COLLECTOR-EMITTER SATURATION
-5
CE(sat)
COLLECTOR CURRENT I (A)
C
V - I
CE(sat)
C
VOLTAGE V (mV)
-10
-30
-50
-100
-300
-500
Ta=
75 C
Ta=25 C Ta=-25
C
V =-2V
CE
Q (PNP TRANSISTOR)
1
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KTX511T
Revision No : 1
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (A)
C
C (pF)
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
MOUNTED ON A
MOUNTED ON A CERAMIC BOARD
CERAMIC BOARD
(600mm 0.8mm)
C - V
ob
CB
-0.1
-0.3
-1
-10
-30
-3
30
1K
f - I
T
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
f=1MHz
CE
3
100
5
10
30
50
-1
-3
-5
-30
-10
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
I MAX
(CONTINUOUS)
C
100mS*
10mS*
1mS*
50
0
S*
100
S*
DC O
PERATION
2
(600mm 0.8mm)
2
REVERSE CURRENT I (
A)
R
REVERSE VOLTAGE V (V)
R
I - V
R
R
I - V
F
FORWARD VOLTAGE V (V)
F
FORWARD CURRENT I (mA)
F
F
0.001
0
100
200
300
400
500
2
10
0.01
0.1
1
10
3
10
Ta=25 C
0
1
5
3
5
10
30
50
Ta=25 C
10
15
20
25
30
D (SBD)
1
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KTX511T
Revision No : 1
0.2
AMBIENT TEMPERATURE Ta ( C)
-40
AMBIENT TEMPERATURE Ta ( C)
I - Ta
R
REVERSE CURRENT I (
A)
R
V - Ta
F
FORWARD VOLTAGE V (V)
F
0
40
80
120
160
I =700mA
F
C - V
R
REVERSE VOLTAGE V (V)
T
TERMINAL CAPACITANCE C (pF)
T
R
0
0
1
-40
10
10
2
10
3
10
4
0
40
80
120
160
200
Ta=25 C
0.3
0.4
0.5
0.6
0.7
0.8
5
10
15
20
25
30
20
40
60
80
100
120
140
160
180
200
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