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SEMICONDUCTOR
TECHNICAL DATA
KTX512T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX512T is formed with two chips, one being equivalent to
the KTA1535T and the other the KDR411S, encapsulated in one packages.
Ultrasmall package facilitates miniaturization in end products
(mounting height 0.7 ).
DIM MILLIMETERS
A
B
D
E
TS6
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
K
B
E
C
L
H
J
J
I
2
3
5
1
6
4
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. D ANODE
4. Q , D COMMON (COLLECTOR, CATHODE)
5. Q , D COMMON (COLLECTOR, CATHODE)
6. Q , D COMMON (COLLECTOR, CATHODE)
1
1
1
1
1
1
1
1
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
DC
I
C
-3
A
Pulse
I
CP
-5
A
Base Current
I
B
600
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600
0.8 )
1
2
3
6
5
4
Q1
D1
EQUIVALENT CIRCUIT (TOP VIEW)
Type Name
Marking
Lot No.
D B
1
2
3
6
5
4
MAXIMUM RATING (Ta=25 )
Transistor Q
1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Peak Reverse Voltage
V
RRM
40
V
DC Reverse Voltage
V
R
20
V
Average Output Current
I
D
0.5
A
Peak Forward Surge Current
I
FSM
3
A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 125
Diode (SBD) D
1
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KTX512T
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
Transistor Q
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
(1)
I
F
=10mA
-
-
0.3
V
V
F
(2)
I
F
=500mA
-
-
0.5
V
Reverse Current
I
R
V
R
=10V
-
-
30
A
Total Capacitance
C
T
V
R
=10V, f=1MHz
-
20
-
pF
Diode (SBD) D
1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-12V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-10 A, I
E
=0
-20
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-20
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10 A, I
C
=0
-5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1.5A, I
B
=-30mA
-
-130
-165
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-1.5A, I
B
=-30mA
-
-0.85
-1.2
V
DC Current Gain
h
FE
V
CE
=-2V, I
C
=-500mA
200
-
560
Transition Frequency
f
T
V
CE
=-2V, I
C
=-500mA
-
160
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz
-
45
-
pF
Swiitching
Time
Turn-On Time
t
on
-
30
-
nS
Storage Time
t
stg
-
90
-
Fall Time
t
f
-
10
-
I
B1
B2
I
INPUT
OUTPUT
50
1
220
F
PW=20
s
DC 1%
470
F
R
V
L
R
BE
V =5V
CC
V =-5V
-20I =20I =I =-1.5A
B1
B2 C
<
=
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KTX512T
Revision No : 1
C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-0.2
-0.4
-0.6
-0.8
-1.0
-0.2
-0.4
-0.6
-1.0
-0.8
-1.2
-1.4
-1.8
-1.6
-2.0
I =0mA
-2mA
-4mA
-6mA
-8mA
-10mA
-12mA
-14mA
-16mA
B
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
-1
-2
-3
-4
-5
-20
-40
-60
-100
-80
-120
-140
-180
-160
-200
I =0mA
-0.1mA
-0.2mA
-0.3mA
-0.4mA
-0.5mA
-0.6mA
-0.7mA
-0.8mA
B
V - I
C
COLLECTOR CURRENT I (A)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
-0.01
-0.03
-0.05
-0.1
-0.3
-1
-0.5
VOLTAGE V (mV)
-0.01
-0.03
-0.1
-1
-3
-0.3
V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
-0.1
-0.3
-0.5
-1
-3
-10
-5
VOLTAGE V (V)
-0.01
-0.03
-0.1
-1
-3
-0.3
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
30
1K
h - I
FE
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
CE
-0.01
-0.03
-0.1
-1
-3
-0.3
I /I =20
B
C
I /I =50
B
C
I /I =50
B
C
COLLECTOR-EMITTER SATURATION
-0.005
CE(sat)
COLLECTOR CURRENT I (A)
C
V - I
CE(sat)
C
VOLTAGE V (V)
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
Q (TRANSISTOR)
1
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KTX512T
Revision No : 1
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
BASE-EMITTER VOLTAGE V (V)
BE
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (A)
C
C (pF)
COLLECTOR CURRENT I (A)
C - V
ob
CB
I - V
C
BE
30
1K
f - I
T
C
50
100
300
500
-0.01
-0.03
-0.1
-1
-3
-0.3
V =-2V
CE
C
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
V =-2V
CE
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON A
CERAMIC BOARD
(600mm 0.8mm)
2
-0.02
-0.1
-0.3
-0.5
-3
-5
-1
-10
-0.05
-0.2
-1
-3
-10
-20
MOUNTED ON A CERAMIC BOARD
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
I MAX
(CONTIN-
UOUS)
C
100mS*
10m
S*
1m
S*
500
S*
DC O
PERA
TIO
N
(600mm 0.8mm)
2
FORWARD VOLTAGE V (V)
FORWARD CURRENT I (A)
0.1
0
100m
10m
1m
100
F
1
0.5
0.4
0.3
0.2
F
Ta=125
C
I - V
F F
0.6
Ta=
75
C
Ta=25
C
Ta=-
25
C
10
30
50
100
300
1K
500
-1
-10
-30
-3
-5
f=1MHz
D (SBD)
1
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KTX512T
Revision No : 1
REVERSE CURRENT I (A)
R
1
0
REVERSE VOLTAGE V (V)
R
I - V
R
R
5
10
15
20
10
100
1m
10m
Ta=25 C
25
30
35
Ta=75 C
Ta=125 C
C - V
T
R
R
REVERSE VOLTAGE V (V)
0
1
T
CAPACITANCE BETWEEN TERMINALS C (pF)
10
10
100
1K
20
30
40
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