1999. 10. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8550
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8050.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-6V, I
C
=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100 A, I
E
=0
-40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-2mA, I
B
=0
-25
-
-
V
DC Current Gain
h
FE
(1)
V
CE
=-1V, I
C
=-5mA
45
170
-
h
FE
(2) (Note)
V
CE
=-1V, I
C
=-100mA
85
160
300
h
FE
(3)
V
CE
=-1V, I
C
=-800mA
40
80
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-800mA, I
B
=-80mA
-
-0.28
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-800mA, I
B
=-80mA
-
-0.98
-1.2
V
Base-Emitter Voltage
V
BE
V
CE
=-1V, I
C
=-10mA
-
-0.66
-1.0
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-50mA
100
200
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, f=1MHz, I
E
=0
-
15
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-25
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-1.5
A
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
(2) Classification B:85 160 , C : 120 200 , D : 160 300
1999. 10. 25
2/2
MPS8550
Revision No : 1
f - I
C
COLLECTOR CURRENT I (mA)
-1
-3
-10
-100
T
TRANSITION FREQUENCY f (MHz)
10
C
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
-0.4
-0.8
-1.2
-1.6
-2.0
-0.1
-0.2
-0.3
-0.4
I =-4.0mA
B
T
C
-300
-30
30
50
100
300
V =-10V
CE
I =-3.5mA
B
I =-3.0mA
B
I =-2.5mA
B
I =-2.0mA
B
I =-0.5mA
B
100
DC CURRENT GAIN h
-1
COLLECTOR CURRENT I (mA)
-0.1
10
30
50
-0.3
-10
-3
-30
C
-100
1k
FE
300
500
h - I
FE
C
V =-1V
CE
-300 -1K
-0.1
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
I - V
C
BE
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-0.3
-1
-3
-10
-30
-100
-0.5
-5
-50
V =-1V
CE
SATURATION VOLTAGE
BE(sat),
COLLECTOR CURRENT I (mA)
C
V V - I
BE(sat),
CE(sat)
C
V V (mV)
CE(sat)
I =10I
-0.1
-10
-30
-100
-50
-300
-0.3
-1
-3
-10
-30 -100
-1k
-500
-300 -1K
C
-3k
-5k
V (sat)
CE
BE
V (sat)
B
-5
-50
-1
-5
-10
-50
100
10
1
5
50
f=1MHz
E
I =0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V
ob
CB
C (pF)
3
30
-3
-30
-0.5
I =-1.5mA
B
I =-1.0mA
B
PDF 
ZIP