2002. 5. 28
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA94
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
Complementary to MPSA44.
MAXIMUM RATING (Ta=25)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
*Pulse Test : Pulse Width300S, Duty Cycle2%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=-100A, I
E
=0
-400
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-1mA, I
B
=0
-400
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
C
=-100A, I
B
=0
-400
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-10A, I
C
=0
-6.0
-
-
V
Collector Cut off Current
I
CBO
V
CB
=-300V, I
E
=0
-
-
-100
nA
Collector Cut off Current
I
CES
V
CE
=-400V, I
B
=0
-
-
-1
A
Emitter Cutoff Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-100
nA
DC Current Gain *
h
FE
V
CE
=-10V, I
C
=-1mA
40
-
-
V
CE
=-10V, I
C
=-10mA
50
-
300
V
CE
=-10V, I
C
=-50mA
45
-
-
V
CE
=-10V, I
C
=-100mA
40
-
-
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.5
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=-10mA, I
B
=-1mA
-
-
-0.75
V
Collector Output Capacitance
C
ob
V
CB
=-20V, I
E
=0, f=1MHz
-
7
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-400
V
Collector-Emitter Voltage
V
CEO
-400
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
I
C
-300
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
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