2005. 6. 1
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SEMICONDUCTOR
TECHNICAL DATA
PG03DBVSC
TVS Diode for ESD
Protection in Portable Electronics
Revision No : 0
Protection in Portable Electronics Applications.
FEATURES
50 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA's)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
MAXIMUM RATING (Ta=25 )
VSC
DIM
MILLIMETERS
A
B
C
D
E
1.4 0.05
CATHODE MARK
C
D
B
A
E
F
F
1.0 0.05
0.6 0.05
0.28 0.03
0.5 0.05
0.12 0.03
2
1
1. ANODE
2. ANODE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Junction Temperature
T
j
-55 150
Storage Temperature
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Stand-Off Voltage
V
RWM
-
-
-
3.3
V
Zener Voltage
V
Z
I
t
=1mA
4.2
-
6.2
V
Reverse Leakage Current
I
R
V
RWM
=3.3V
-
-
20
A
Junction Capacitance
C
J
V
R
=0V, f=1MHz
-
-
25
pF
Marking
3B
2
1
2
1
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