1999. 11. 16
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP112
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.), V
CE
=4V, I
C
=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
2
A
Pulse
I
CP
4
Base Current
DC
I
B
50
mA
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
50
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CEO
V
CE
=50V, I
B
=0
-
-
2
mA
I
CBO
V
CB
=100V, I
E
=0
-
-
1
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
2
mA
DC Current Gain
h
FE
V
CE
=4V, I
C
=1A
1000
-
-
V
CE
=4V, I
C
=2A
500
-
-
Collector-Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=30mA, I
B
=0
100
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=2A, I
B
=8mA
-
-
2.5
V
Base-Emitter On Voltage
V
BE(ON)
V
CE
=4V, I
C
=2A
-
-
2.8
V
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=0.1MHz
-
-
100
pF
C
B
E
R
10k
0.6k
R
1
2
=
=
EQUIVALENT CIRCUIT
1999. 11. 16
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TIP112
Revision No : 1
D
POWER DISSIPATION P (W)
0
0
CASE TEMPERATURE Ta ( C)
D
P - Ta
h - I
C
COLLECTOR CURRENT I (A)
0.01
100K
FE
10
DC CURRENT GAIN h
FE
C
0.1
1
10
30
100
300
10K
30K
50
100
150
200
10
20
30
40
50
60
70
80
V =4V
CE
10
0.01
0.1
0.3
1
3
30
100
0.1
1
10
I /I =500
C
1
CB
COLLECTOR-BASE VOLTAGE V (V)
C - V
CAPACITANCE C (pF)
CB
0.01
SATURATION VOLTAGE
BE(sat)
COLLECTOR CURRENT I (A)
C
CE(sat)
BE(sat)
V , V - I
ob
ob
0.1
1
10
100
3
5
10
30
50
100
300
500
1k
f=0.1MHz
C
V ,V (V)
CE(sat)
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
1
C
0.4
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (A)
C
0.1
5
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
2
3
4
5
I =150
A
B
3
10
30
50
100
0.3
0.5
1
3
5
10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH
INCREASE IN
TEMPERATURE
I MAX(PULSED)
C
DC OPERATION
1m
s
0.8
1.2
1.6
2.0
200
A
250
A
300A
400
A
450
A
500
A
350
A
BE(sat)
V
CE(sat)
V
B
5ms
Tc=25 C
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