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Электронный компонент: KAF-0261E

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Eastman Kodak Company - Image Sensor Solutions
Phone: (585) 722-4385 Fax: (585) 477-4947 Web: www.kodak.com/go/imagers E-mail: imagers@kodak.com
KAF-0261E





KAF - 0261E
512(H) x 512(V) Pixel
Enhanced Response
Full-Frame CCD Image Sensor
Performance Specification




Eastman Kodak Company
Image Sensor Solutions
Rochester, New York 14650

Revision 3
July 22, 2002
Eastman Kodak Company - Image Sensor Solutions
Phone: (585) 722-4385 Fax: (585) 477-4947 Web: www.kodak.com/go/imagers E-mail: imagers@kodak.com
2
Revision No. 3

KAF-0261E
TABLE OF CONTENTS
1.1 Features.........................................................................................................................................3
1.2 Description....................................................................................................................................3
1.3 Architecture ..................................................................................................................................4
1.4 Image Acquisition.........................................................................................................................4
1.5 Charge Transport ..........................................................................................................................4
1.6 Output Structure............................................................................................................................4
2.1 Package Diagram ..........................................................................................................................5
2.2 Pin Description .............................................................................................................................6
2.3 Absolute Minimum/Maximum Ratings ........................................................................................8
2.4 DC Operating Conditions .............................................................................................................8
2.5 AC Clock Level Conditions..........................................................................................................9
2.6 C Timing Chart ...........................................................................................................................10
2.7 AC Timing Diagram ...................................................................................................................11
3.1 Image Specifications...................................................................................................................12
Electro-Optical............................................................................................................................12
CCD Parameters Common to Both Outputs ...............................................................................12
CCD Parameters Specific to High Gain Output Amplifier.........................................................12
CCD Parameters Specific to Low Gain (High Dynamic Range) Output Amplifier...................13
3.2 Cosmetic Specification ...............................................................................................................14
4.1 Quality Assurance and Reliability ..............................................................................................15
4.2 Ordering Information..................................................................................................................15
5.1 Typical Performance Data ..........................................................................................................16
Revision Changes ..................................................................................................................................17
FIGURES
Figure 1 - Functional Block Diagram......................................................................................................3
Figure 2 - Output Structure .....................................................................................................................4
Figure 3 - Package Configuration ...........................................................................................................5
Figure 4 Pin-Out Diagram....................................................................................................................7
Figure 5 - AC Timing Diagram.............................................................................................................11
Figure 6 - Typical Spectral Response ..................................................................................................16
Eastman Kodak Company - Image Sensor Solutions
Phone: (585) 722-4385 Fax: (585) 477-4947 Web: www.kodak.com/go/imagers E-mail: imagers@kodak.com
3
Revision No. 3

KAF-0261E

1.1 Features
Front Illuminated Full-Frame Architecture
512(H) x 512(V) Photosensitive Pixels
Transparent Gate True Two Phase Technology
(Enhanced Spectral Response)
20m(H) x 20m(V) Pixel Size
1:1 Aspect Ratio
100% Fill Factor
Single Readout Register
2 Clock Selectable Outputs
High Gain Output (10 V/e-) for low noise
Low Gain Output (3.5 V/e-)
for high dynamic range
Low Dark Current (<30pA/cm2 @ T=25oC)

1.2
Description
The KAF-0261E is a high performance, silicon charge-
coupled device (CCD) designed for a wide range of
image sensing applications in the 0.3
m to 1.1m
wavelength band. Common applications include
medical, scientific, military, machine and industrial
vision.

The sensor is built with a true two-phase CCD
technology employing a transparent gate. This
technology simplifies the support circuits that drive the
sensor and reduces the dark current without
compromising charge capacity. The transparent gate
results in spectral response increased ten times at
400nm, compared to a front side illuminated standard
polysilicon gate technology. The sensitivity is increased
50% over the rest of the visible wavelengths.

The low dark current of the KAF-0261E makes this
device suitable for low light imaging applications
without sacrificing in charge capacity. The clock
selectable on-chip output amplifiers have been specially
designed to meet two different needs. The first is a high
sensitivity 2-stage output with 10V/e
-
charge to
voltage conversion ratio. The second is a single stage
output with 3.5V/e
-
charge to voltage conversion
ratio.
Figure 1 - Functional Block Diagram
Shaded areas represent 4 non-imaging pixels at the beginning and 8 non-imaging pixels at the end of each line.
There are also 4 non-imaging lines at the top and bottom of each frame.
FD 2
KAF-0261
Usable Active Image Area
512(H) x 512(V)
20
m x 20m pixels
4 Dark Lines
V1
V2
Guard
4 Dark Lines
512 Active Pixels/Line
8 Dark
2 Inactive
4 Dark
4 Inactive
H22
H21
R
Vog
Vrd
Vout 1
Vdd 1
Vss
Vout 2
Vdd 2
Sub
FD 1
H1
H2
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4
Revision No. 3

KAF-0261E

1.3 Architecture
The KAF-0261E consists of one vertical (parallel) CCD
shift register, one horizontal (serial) CCD shift register
and a selectable high or low gain output amplifier. (See
Figure 1.) Both registers incorporate two-phase buried
channel CCD technology. The vertical register consists
of 20
m x 20m photocapacitor sensing elements
(pixels) that also serves as the transport mechanism.
The pixels are arranged in a 512(H) x 512(V) array; an
additional 12 columns (4 at the left and 8 at the right)
and 8 rows (4 each at top and bottom) of non-imaging
pixels are added as dark reference. There is no storage
array, so this device must be synchronized with strobe
illumination or shuttered during readout.
1.4 Image
Acquisition
An image is acquired when incident light, in the form
of photons, falls on the array of pixels in the vertical
CCD register and creates electron-hole pairs (or simply
electrons) within the silicon substrate. This charge is
collected locally by the formation of potential wells
created at each pixel site by induced voltages on the
vertical register clock lines (V1, V2). These same
clock lines are used to implement the transport
mechanism as well. The amount of charge collected at
each pixel is linearly dependent on light level and
exposure time and non-linearly dependent on
wavelength until the potential well capacity is
exceeded. At this point charge will 'bloom' into
vertically adjacent pixels.
1.5 Charge Transport
Integrated charge is transported to the output in a two
step process. Rows of charge are first shifted line by
line into the horizontal CCD. 'Lines' of charge are then
shifted to the output pixel by pixel. Referring to the
timing diagram illustration in section 2.7, integration of
charge is performed with V1 and V2 held low.
Transfer to horizontal CCD begins when V1 is
brought high causing charge from the V1 and V2
gates to combine under the V1 gate. V1 and V2
now reverse their polarity causing the charge packets to
'spill' forward under the V2 gate of the next pixel. The
rising edge of V2 also transfers the first line of charge
into the horizontal CCD. A second phase transition
places the charge packets under the V1 electrode of
the next pixel.
The sequence completes when V1 is brought low.
Clocking of the vertical register in this way is known as
accumulation mode clocking. Next, the horizontal CCD
reads out the first line of charge using traditional
complementary clocking (using H1 and H2 pins) as
shown. The falling edge of H2 forces a charge packet
over the output gate (OG) onto one of the output nodes
(floating diffusion) which is buffered by the output
amplifier. The cycle repeats until all lines are read.
1.6 Output Structure
The final gate of the horizontal register is split into two
sections, H21 and H22. The split gate structure
allows the user to select either of the two output
amplifiers. To use the high dynamic range single-stage
output (Vout1), tie H22 to a negative voltage to block
charge transfer, and tie H21 to H2 to transfer charge.
To use the high sensitivity two-stage output (Vout2), tie
H21 to a negative voltage and H22 to H2. The
charge packets are then dumped onto the appropriate
floating diffusion output node whose potential varies
linearly with the quantity of charge in each packet. The
amount of potential change is determined by the simple
expression
Vfd=Q/Cfd.
The translation from electrons to voltages is called the
output sensitivity or charge-to-voltage conversion.
After the output has been sensed off-chip, the reset
clock (R) removes the charge from the floating
diffusion via the reset drain (VRD). This, in turn,
returns the floating diffusion potential to the reference
level determined by the reset drain voltage.
Figure 2 - Output Structure
FD1
H1
H21
H22
H2
FD2
Sub
Vdd2
Vout2
Vlg
Vss
Vdd1
Vout1
R
Vrd
Vog
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5
Revision No. 3

KAF-0261E

2.1 Package
Diagram

Figure 3 - Package Configuration
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6
Revision No. 3

KAF-0261E
2.2 Pin
Description
Pin No.
Symbol
Description
Notes
1 OG
Output Gate
2
VOUT2
Video Output from High Sensitivity Two-Stage
3
VDD1/VD
Amplifier Supply for VOUT1 and VOUT2 amplifiers
4 VRD
Reset
Drain
5
R Reset
Clock
6
VSS
Output Amplifier Return
7
H1
Horizontal (Serial) CCD Clock - Phase 1
8
H2
Horizontal (Serial) CCD Clock - Phase 2
9 VOUT1
Video
Output
from High Dynamic Range Single-Stage
10
H21
Last Horizontal (Serial) CCD Phase - Split Gate
11
H22
Last Horizontal (Serial) CCD Phase - Split Gate
12 N/C
No
Connect
13, 14
SUBSTRA Substrate
15, 16, 21, 22
V1
Vertical (Parallel) CCD Clock - Phase 1
1
17, 18, 19, 20
V2
Vertical (Parallel) CCD Clock - Phase 2
2
23 GUARD
Guard
Ring
24
VLG
First Stage Load Transistor Gate for Two-Stage
Notes:
1. Pins 15, 16, 21, and 22 must be connected together - only one Phase 1-clock driver is required
2. Pins 17, 18, 19, and 20 must be connected together - only one Phase 2-clock driver is required
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7
Revision No. 3

KAF-0261E
Pixel (1,1)
1
2
3
4
5
6
7
8
9
10
11
12
R
VSS
H21
H2
VOUT1
OG
VDD1/VDD2
VOUT2
VRD
H1
H22
N/C
24
23
22
21
20
19
18
17
16
15
14
13
GUARD
V1
SUB
V1
V1
SUB
VLG
V2
V2
V2
V2
V1
Pixel (512,512)
Figure 4 Pin-Out Diagram
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8
Revision No. 3

KAF-0261E
2.3
Absolute Minimum/Maximum Ratings
Min. Max. Units Conditions
Temperature Storage
-100
+80
C
At
Device
Operating
-70 +50 C
All Clocks
-16
+16
V
Note 1
Voltage OG
0
+8
V
Note
2
VRD, VSS, VDD, GUARD
0
+20
V
Note 2
Current
Output Bias Current (IDD)
10
mA
Capacitance
10 pF

Notes:
1. Voltage between any two clocks or between any clock and Vsub.
Warning:
For maximum performance, built-in gate protection has been added only to the OG pin. These devices require extreme
care during handling to prevent electrostatic discharge (ESD) induced damage.
Devices are rated as Class 0 (<250V per JESD22 Human Body Model test), or Class A (<200V JESD22 Machine
Model test.)
2. Voltage with respect to Vsub.
2.4 DC Operating Conditions
Min. Nom. Max.
Units
Pin
Impedance
VSUB Substrate
0.0
0.0
0.0 V Common
VDD
Output Amplifier Supply
15.0
+17.0
17.5
V
5 pf, 2K
(Note 1)
VSS
Output Amplifier Return
1.4
+2.0
2.1
V
5 pf, 2K
VRD
Reset Drain
11.5
+12
12.5
V
5 pf, 1M
OG
Output Gate
4.0
4.5
5.0
V
5 pf, 10M
GUARD
Guard Ring
9.0
+10.0
15.0
V
350 pF, 10M
VLG
Load Gate
VSS - 1.0
VSS
VSS + 1.0
V
Notes
1. Vdd = 17 volts for applications where the expected output voltage > 2.0 volts. For applications where the expected
useable output voltage is < 2 volts Vdd can be reduced to 15 volts.
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9
Revision No. 3

KAF-0261E
2.5 AC Clock Level Conditions
Min. Nom. Max. Units
Pin
Impedance
V1 Vertical Clock - Phase 1
Low
-10.2
-10.0
-9.0
V
13 nf, 10M
High 0.0 0 2.0 V
V2 Vertical Clock - Phase 2
Low
-10.2
-10.0
-9.0
V
16 nf, 10M
High 0.0 0 2.0 V
H1 Horizontal Clock - Phase 1
Low
-2.2
-2.0
-1.8
V
160 pf, 10M
High 7.8
+8.0
8.2 V
H2 Horizontal Clock - Phase 2
Low
-2.2
-2.0
-1.8
V
110 pf, 10M
High 7.8
+8.0
8.2 V Ch1-h2 = 75pf
R
Reset Clock
Low
2.0
3.0
3.5
V
10 pF, 10M
High 10.0 V
Using the High Gain
Output (Vout 2)
Using the High
Dynamic
Range Output (Vout1)
Min. Nom. Max. Min. Nom. Max. Units
Pin
Impedance
H21 Horizontal Clock - Phase 1 Low
-4
H2
low
H2
low
H2 V 10
pF,
10M
High -4
H2
low
H2
low
H2 V
H22 Horizontal Clock - Phase 2 Low
H2 -4 H2
low
H2
low
V 10
pF,
10M
High
H2 -4 H2
low
H2
low
V
Note: When using Vout1
H21 is clocked identically with H2 while H22 is held at a static level. When using Vout2 H21
and
H22 are exchanged so that H22 is identical to H2 and H21 is held at a static level. The static level should be the
same voltage as
H2 low.
Note: The AC and DC operating levels are for room temperature operation. Operation at other temperatures may require
adjustments of these voltages. Pins shown with impedances greater than 1 MOhm are expected resistances. These pins are
only verified to 1 MOhm.

Note: V1, 2 capacitances are accumulated gate oxide capacitance, and so are an over-estimate of the capacitance.

Note: This device is suitable for a wide range of applications requiring a variety of different operating conditions. Consult
Eastman Kodak in those situations in which operating conditions meet or exceed minimum or maximum levels.
Eastman Kodak Company - Image Sensor Solutions
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10
Revision No. 3

KAF-0261E

2.6 AC Timing Chart
Description Symbol
Min.
Nom.
Max.
Units
Notes
H1, H2 Clock Frequency
f
H
5
8
MH
1, 2, 3
V1, V2 Clock Frequency
f
V
100
125
KH
1, 2, 3
Pixel Period (1 Count)
tpix
125
200
ns
H1, H2 Set-up Time
t
HS
500 100
ns
V1, V2 Clock Pulse Width
t
V
4 5
s
2
Reset Clock Pulse Width
t
R
10 20 ns 4
Readout Time
t
readout
40
64
ms
5
Integration Time
t
int
6
Line Time
t
line
78 122
s
7
Notes:
1. 50% duty cycle values.
2. CTE may degrade above the nominal frequency.
3. Rise and fall times (10/90% levels) should be limited to 5-10% of clock period. Crossover of register clocks should be
between 40-60% of amplitude.
4.
R should be clocked continuously
5. t
readout
= (520* t
line
)
6. Integration time (t
int
) is user specified. Longer integration times will degrade noise performance due to dark signal fixed
pattern and shot noise.
7.
t
line
= (3 * t
V
) + t
HS
+ 530* t
pix
+ t
pix
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11
Revision No. 3

KAF-0261E

2.7 AC Timing Diagram
Note: This device is suitable for a wide range of applications requiring a variety of different timing frequencies.
Therefore, only maximum and minimum values are shown above. Consult Eastman Kodak in those situations, which
require special consideration
Frame Timing
t
Readout
Line
1
2
520
520
1 Frame = 520 Lines
V1
V2
H1
H2
t
int
Pixel Timing Detail
R
H1
H2
V
out
t
R
V
sat
V
dark
V
sub
V
odc
1 count
t
pix
Line Timing Detail
1 line
V1
V2
H1
H2
R
530 counts
t
HS
1(t
pix
)
t
V
t
V
V
pix
Line Content
Photoactive Pixels
Dark Reference Pixels
Dummy Pixels
1-4
5-8
9 - 520
521-528
529-530
Vsat Saturated pixel video output signal
Vdark Video output signal in no light situation, not zero due to Jdark
Vpix Pixel video output signal level, more electrons =more negative*
Vodc Video level offset with respect to vsub
Vsub Analog Ground
* See Image Aquisition section
Figure 5 - Timing Diagram
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12
Revision No. 3

KAF-0261E

3.1 Image Specifications
All values derived using nominal operating conditions with the recommended timing. Correlated
doubling sampling of the output is assumed and recommended. Many units are expressed in electrons -
to convert to voltage, multiply by the amplifier sensitivity.
Electro-Optical
Symbol Parameter Min.
Nom.
Max.
Units
Condition
F F
Optical Fill Factor
100
%
PRNU
Photoresponse Non-uniformity
5
% rms
Full Array
QE
Quantum Efficiency
(450, 550, 650 nm)
See Q.E. curve
(Figure 6.)
CCD Parameters Common To Both Outputs
Symbol Parameter Min
Nom.
Max.
Units
Condition
N
e-sat
Sat. Signal - Vccd register
450
500
ke
-
Note 2
J
d
Dark
Current
15.3
400
30
750
pA/cm
2
e
-
pixel/sec
25 C
(mean of all pixels)
DCDR
Dark Current Doubling Temp
5 6.3 7.5
o
C
DSNU
Dark Signal Non-uniformity
750
e-/pix/sec
Note 4
CTE
Charge Transfer Efficiency
.99997
Note
5
PRNL Photoresponse
Non-Linearity
1 2
%
Note 9
Bs Blooming
Suppression
none
CCD Parameters Specific to High Gain Output Amplifier
Symbol Parameter Min.
Nom.
Max.
Units
Condition
Vout/Ne-
Output Sensitivity
9
10
uV/electron
N
e-sat
Sat. Signal
180
200
240
ke
-
Note 1
N
e-total
Total Sensor Noise:
13
20
e
-
rms
Note 7
F
H
Horizontal CCD Frequency:
2
5
MHz
Note 6
DR
Dynamic Range:
79
83
dB
Note 8
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13
Revision No. 3

KAF-0261E
CCD Parameters Specific to Low Gain (high dynamic range) Output Amplifier
Symbol Parameter Min.
Nom.
Max.
Units
Condition
Vout/Ne- Output Sensitivity
3.2
3.5
uV/electron
N
e-sat
Sat. Signal
550K
628K
ke
-
Note 3
N
e-total
Total Sensor Noise:
22
30
e
-
rms
Note 7
F
H
Horizontal CCD Frequency:
0.5
2
MHz
Note 6
DR
Dynamic Range:
85
87
dB
Note 8
Notes:
1. Point where the output saturates when operated with nominal voltages.
2. Signal level at the onset of blooming in the vertical (parallel) CCD register
3. Maximum signal level at the output of the high dynamic range output. This signal level
will only be achieved when binning pixels containing large signals.
4. None of 16 sub arrays (128 x 128) exceed the maximum dark current specification.
5. For 2MHz data rate and T = 30 C to -40 C.
6. Using maximum CCD frequency and/or minimum CCD transfer times may compromise performance
7. At
T
integration
= 0; data rate = 1 MHz; temperature = -30 C
8. Uses
20LOG(Ne- sat / ne- total) where Ne- sat refers to the appropriate saturation signal.
9. Worst case deviation from straight line fit, between 1% and 90% of Vsat.
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14
Revision No. 3

KAF-0261E

3.2 Cosmetic Specification
Point Defects
Cluster Defects
Column Defects
10 4 0
Dark Defect
A pixel which deviates by more than 20% from neighboring pixels when
illuminated to 70% of saturation
Bright Defect
A pixel whose dark current exceeds 4500 electrons/pixel/second at 25
C
Cluster Defect
A grouping of not more than 5 adjacent point defects.
Column Defect
1) A grouping point defects along a single column. (Dark Column)
2) A column that contains a pixel whose dark current exceeds 150,000
electrons/pixel/second at 25 C. (Bright Column)
3) A column that does not exhibit the minimum charge capacity
specification. (Low charge capacity)
4) A column that loses >500 electrons when the array is illuminated to a
signal level of 2000 electrons/pix. (Trap like defects)
Neighboring Pixels
The surrounding 128 x 128 pixels of 64 columns/rows

Defects are separated by no less than 3 pixels in any one direction.
1,512 512,512




All pixels subject to defect specification






1,1 512,1
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15
Revision No. 3

KAF-0261E

4.1 Quality Assurance and Reliability
Quality Strategy: All image sensors will conform to the specifications stated in this document. This will be accomplished
through a combination of statistical process control and inspection at key points of the production process. Typical
specification limits are not guaranteed but provided as a design target. For further information refer to ISS Application Note
MTD/PS-0292, Quality and Reliability.

Replacement: All devices are warranted against failure in accordance with the terms of Terms of Sale. This does not include
failure due to mechanical and electrical causes defined as the liability of the customer below.

Liability of the Supplier: A reject is defined as an image sensor that does not meet all of the specifications in this document
upon receipt by the customer

Liability of the Customer: Damage from mechanical (scratches or breakage), electrical (ESD), or other electrical misuse of
the device beyond the stated absolute maximum ratings, which occurred after receipt of the sensor by the customer, shall be
the responsibility of the customer.

Cleanliness: Devices are shipped free of mobile contamination inside the package cavity. Immovable particles and scratches
that are within the imager pixel area and the corresponding cover glass region directly above the pixel sites are also not
allowed. The cover glass is highly susceptible to particles and other contamination. Touching the cover glass must be
avoided. See ISS Application Note MTD/PS-0237, Cover Glass Cleaning, for further information.

ESD Precautions: Devices are shipped in static-safe containers and should only be handled at static-safe workstations. See
ISS Application Note MTD/PS-0224 for handling recommendations.

Reliability: Information concerning the quality assurance and reliability testing procedures and results are available from the
Image Sensor Solutions and can be supplied upon request. For further information refer to ISS Application Note MTD/PS-
0292, Quality and Reliability.

Test Data Retention: Image sensors shall have an identifying number traceable to a test data file. Test data shall be kept for a
period of 2 years after date of delivery.
Mechanical: The device assembly drawing is provided as a reference. The device will conform to the published
package tolerances.
4.2
Ordering Information
Address all inquiries and purchase orders to:
Image Sensor Solutions
Eastman Kodak Company
Rochester, New York 14650-2010
Phone:
(585) 722-4385
Fax: (585)
477-4947
Web: www.kodak.com/go/imagers
E-Mail: imagers@kodak.com
Kodak reserves the right to change any information contained herein without notice. All information furnished by Kodak
is believed to be accurate.
Eastman Kodak Company - Image Sensor Solutions
Phone: (585) 722-4385 Fax: (585) 477-4947 Web: www.kodak.com/go/imagers E-mail: imagers@kodak.com
16
Revision No. 3

KAF-0261E

5.1 Typical Performance Data
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
400
500
600
700
800
900
1000
Wavelength [nm ]
Figure 6 - Typical Spectral Response
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17
Revision No. 3

KAF-0261E
Revision Changes:
Revision
Number
Release
Date
Description of Changes
1
10/27/00
Corrected Figure 4, Pinout Diagram.
Updated DC Operating Conditions, Section 2.4.
Updated CCD Parameters Specific to Low Gain (high dynamic range)
Output Amplifier (page 13)
2
10/27/00
Corrected Figure 4, Pinout Diagram. (Pixel locations incorrect.)
Updated DC Operating Conditions for Output Gate (Section 2.4).
Updated CCD parameters Specific to Low Gain (High Dynamic Range)
Output Amplifier for Dynamic Range (page 13).
Removed appendix.
3 10/7/02
First version of the document in S9K. Formerly Revision 2 in hard copy
format.
Removed Class 0 from the Cosmetic Specification and UV coated device.
(Section 3.2)
Added ESD classification. (Section 2.3)
Replaced Quality and Reliability notes with current format. (Section 4.2)